2SK1985-01M 반도체 회로 부품 판매점
N-Channel MOSFET Transistor
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 Inchange Semiconductor |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1985-01M
DESCRIPTION
·Drain Current –ID= 5A@ TC=25℃
·Drain Source Voltage-
: VDSS=900V(Min)
·Fast Switching Speed
APPLICATIONS
·Switching regulators
·UPS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
900 V
VGS Gate-Source Voltage
±30
V
ID Drain Current-continuous@ TC=25℃ 5 A
Ptot Total Dissipation@TC=25℃
50 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2.5 ℃/W
62.5 ℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
2SK1985-01M
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=1mA
900
V
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
VDS= VGS; ID=1mA
VGS= 10V; ID= 2.5A
VGS= ±30V;VDS= 0
VDS=900V; VGS= 0
2.5 3.5 V
2.5 2.8 Ω
±100 nA
500 µA
Ciss Input capacitance
1300 1950
Crss Reverse transfer capacitance
VDS=25V;VGS=0V;fT=1MHz
35 55 pF
Coss Output capacitance
100 150
tr Rise time
td(on) Turn-on delay time
tf Fall time
td(off) Turn-off delay time
VGS=10V;ID=5A;
VDD=600V;
RL=10Ω
15 25
20 30
ns
25 40
80 120
isc website：www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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2SK1985-01M mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
2SK1985-01M
N-Channel MOSFET Transistor - Inchange Semiconductor
2SK1985-01MR
N-CHANNEL SILICON POWER MOSFET - Fuji Electric