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Inchange Semiconductor |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
DESCRIPTION
·Drain Current –ID=16A@ TC=25℃
·Drain Source Voltage-
: VDSS=450 (Min)
isc Product Specification
2SK1453
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
Ptot Total Dissipation@TC=25℃
Tj Max. Operating Junction Temperature
Tstg Storage Temperature Range
VALUE
UNI
T
450 V
±30
V
16 A
70 W
150 ℃
-55~150 ℃
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1453
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=10A
IGSS Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0
VSD Diode Forward Voltage
IF=16A; VGS=0
MIN TYP MAX UNIT
450 V
2.0 3.0 V
0.24 0.30
Ω
±100 nA
1 mA
1.8 V
tr Rise time
100 ns
ton Turn-on time
tf Fall time
toff Turn-off time
140 ns
VGS=10V;ID=10A;RL=50Ω
150 ns
600 ns
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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