2SK745 반도체 회로 부품 판매점
N-Channel MOSFET Transistor
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 Inchange Semiconductor |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
FEATURES
·Drain Current –ID=20A@ TC=25℃
·Drain Source Voltage-
: VDSS= 50V(Min)
isc Product Specification
2SK745
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
PD Total Dissipation @TC=25℃
TJ Max. Operating Junction Temperature
Tstg Storage Temperature
VALUE UNIT
50 V
±20
V
20 A
100 W
150 ℃
-55~150 ℃
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK745
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-SourceBreakdown Voltage VGS= 0; ID=10mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= 10VGS; ID= 1mA
VGS= 10V; ID= 10A
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 50V; VGS=0
VSD Forward On-Voltage
IS= 20A; VGS=0
MIN TYP MAX UNIT
50 V
2.1 4.0 V
0.055
Ω
±100
nA
1 μA
1.8 2.2
V
isc website：www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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( isc )
2SK745 mosfet
데이터시트 다운로드 :
[ 2SK745.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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