2SK777 반도체 회로 부품 판매점
N-Channel MOSFET Transistor
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 Inchange Semiconductor |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK777
DESCRIPTION
·Drain Current –ID=10A@ TC=25℃
·Drain Source Voltage-
: VDSS= 450V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
DSS Drain-Source Voltage (VGS=0)
450 V
VGS Gate-Source Voltage
±20
V
ID Drain Current-continuous@ TC=25℃ 10 A
Ptot Total Dissipation@TC=25℃
120 W
Tj
Max. Operating Junction Temperature
150
℃
Tstg Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
1.0
Thermal Resistance,Junction to Ambient 62.5
℃/W
℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK777
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 5A
IGSS Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0
ton Turn-on time
toff Turn-off time
VGS=10V;ID=5A;
RL=50Ω
MIN TYP MAX UNIT
450 V
1.5 4.0 V
0.47 0.65
Ω
±100 nA
1 mA
120 240
ns
330 660
ns
isc website：www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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2SK777 mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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