BUK455-60A 반도체 회로 부품 판매점
N-Channel MOSFET Transistor
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 Inchange Semiconductor |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUK455-60A/B
DESCRIPTION
·High speed switching
·Easy driver for cost effective application
APPLICATIONS
·use in Switched Mode Power Supplies (SMPS),
motor control,welding, And in general purpose switching
resistance application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
Drain
BUK455-60A
Current-continuou
s@ TC=37℃
BUK455-60B
Total Dissipation@TC=25℃
Max. Operating Junction Temperature
Storage Temperature Range
60
±30
41
38
125
175
175
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
1.2 ℃/W
60 ℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
BUK455-60A/B
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(TH)
RDS(ON)
IGSS
Gate Threshold Voltage
VDS= VGS; ID= 1mA
Drain-Source On-stage Resistance
VGS= 10V; BUK455-60A
ID= 20A
BUK455-60B
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 60V;VGS= 0
VSD Diode Forward Voltage
IF= 41A;VGS= 0
MIN MAX UNIT
60 V
2.1 4
V
0.038
0.045
Ω
±100 nA
10 uA
2.0 V
isc website：www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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BUK455-60A mosfet
데이터시트 다운로드 :
[ BUK455-60A.PDF ]
[ BUK455-60A 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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