TMU16N25ZG 반도체 회로 부품 판매점
N-channel MOSFET
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 TRinno |
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
D-PAK
TMD16N25Z(G)/TMU16N25Z(G)
BVDSS
250V
N-channel MOSFET
ID RDS(on)
16A <0.24W
I-PAK
Device
TMD16N25Z / TMU16N25Z
TMD16N25ZG / TMU16N25ZG
Package
D-PAK/I-PAK
D-PAK/I-PAK
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃
Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMD16N25Z / TMU16N25Z
TMD16N25ZG / TMU16N25ZG
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMD16N25Z(G)/TMU16N25Z(G)
250
±30
16
8.3
64
368
16
9.39
93.9
0.75
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
℃
℃
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
July 2012 : Rev0
www.trinnotech.com
TMD16N25Z(G)/TMU16N25Z(G)
1.33
110
Unit
℃/W
℃/W
1/6
TMD16N25Z(G)/TMU16N25Z(G)
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 250 --
--
V
Zero Gate Voltage Drain Current
VDS = 250 V, VGS = 0 V
--
IDSS
VDS = 200 V, TC = 125°C
--
-- 1 µA
-- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 µA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
µA
ON
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance (Note 4)
VGS(th)
VDS = VGS, ID = 250 µA
3
--
5
V
RDS(on)
VGS = 10 V, ID = 8 A
--
0.2 0.24
W
gFS
VDS = 30 V, ID = 8 A
-- 6.5 --
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 944 --
-- 152 --
-- 16 --
pF
pF
pF
SWITCHING
Turn-On Delay Time (Note 4,5)
Turn-On Rise Time (Note 4,5)
Turn-Off Delay Time (Note 4,5)
Turn-Off Fall Time (Note 4,5)
Total Gate Charge (Note 4,5)
Gate-Source Charge (Note 4,5)
Gate-Drain Charge (Note 4,5)
td(on)
VDD = 125 V, ID = 16 A,
--
26
--
ns
tr
RG = 25 Ω
-- 51 -- ns
td(off)
-- 61 -- ns
tf -- 23 -- ns
Qg
VDS = 2000V, ID = 16 A,
--
19
--
nC
Qgs
VGS = 10 V
-- 5 -- nC
Qgd -- 9 -- nC
SOURCE DRAIN DIODE
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
IS
ISM
VSD
trr
Qrr
----
----
VGS = 0 V, IS = 16 A
VGS = 0 V, IS = 16A
dIF / dt = 100 A/µs
-- -- 16 A
-- -- 64 A
-- -- 1.5 V
-- 188 --
ns
-- 1 -- µC
Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L=2.3mH, I AS = 16A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃
3 I SD ≤ 16A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃
4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
July 2012 : Rev0
www.trinnotech.com
2/6
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TMU16N25ZG mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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