TMU5N60AZ 반도체 회로 부품 판매점
N-channel MOSFET
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Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
Improved ESD performance
D-PAK
TMD5N60AZ(G)/TMU5N60AZ(G)
BVDSS
600V
N-channel MOSFET
ID RDS(on)
4.2A
< 2.1W
I-PAK
Device
TMD5N60AZ / TMU5N60AZ
TMD5N60AZG / TMU5N60AZG
Package
D-PAK/I-PAK
D-PAK/I-PAK
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃
Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMD5N60AZ / TMU5N60AZ
TMD5N60AZG / TMU5N60AZG
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMD5N60AZ(G)/TMU5N60AZ(G)
600
±30
4.2
2.71
16.8
217
4.2
9.84
98.4
0.787
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
℃
℃
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMD5N60AZ(G)/TMU5N60AZ(G)
1.27
110
October 2012 : Rev0
www.trinnotech.com
Unit
℃/W
℃/W
1/6
TMD5N60AZ(G)/TMU5N60AZ(G)
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 600 --
--
V
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
IDSS
VDS = 480 V, TC = 125°C
--
-- 1 µA
-- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 µA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
µA
ON
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance (Note 4)
VGS(th)
VDS = VGS, ID = 250 µA
3
--
5
V
RDS(on)
VGS = 10 V, ID = 2.1 A
-- 1.7 2.1 W
gFS VDS = 30 V, ID = 2.1 A -- 5 -- S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 658 --
-- 72 --
-- 9 --
pF
pF
pF
SWITCHING
Turn-On Delay Time (Note 4,5)
Turn-On Rise Time (Note 4,5)
Turn-Off Delay Time (Note 4,5)
Turn-Off Fall Time (Note 4,5)
Total Gate Charge (Note 4,5)
Gate-Source Charge (Note 4,5)
Gate-Drain Charge (Note 4,5)
td(on)
VDD = 300 V, ID = 4.2 A,
--
19
--
ns
tr RG = 25 Ω, VGS = 10 V -- 25 -- ns
td(off)
-- 34 -- ns
tf -- 19 -- ns
Qg
VDS = 480 V, ID = 4.2 A,
--
14
--
nC
Qgs
VGS = 10 V
-- 3 -- nC
Qgd -- 7 -- nC
SOURCE DRAIN DIODE
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
IS
ISM
VSD
trr
Qrr
----
----
VGS = 0 V, IS = 4.2 A
VGS = 0 V, IS = 4.2 A
dIF / dt = 100 A/µs
-- -- 4.2 A
-- -- 16.8 A
-- -- 1.5 V
-- 283 --
ns
-- 1.6 -- µC
Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L=22.6mH, I AS = 4.2A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃
3 I SD ≤ 4.2A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃
4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
October 2012 : Rev0
www.trinnotech.com
2/6
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TMU5N60AZ mosfet
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국내 전력반도체 판매점
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