MS9N90 반도체 회로 부품 판매점
N-Channel MOSFET
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 Bruckewell |
MS9N90
900V N-Channel MOSFET
Description
The MS9N90 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• RDS(on) (Max 1.4 Ω )@VGS=10V
• Gate Charge (Typical 47nC)
• Improved dv/dt Capability, High Ruggedness
• 100% Avalanche Tested
• Maximum Junction Temperature Range (150°C)
• RoHS compliant package
Application
• Adapter
• Switching Mode Power Supply
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
ID
Drain Current -Continuous (TC=100°C)
IDM Drain Current -Pulsed
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dV/dt
Peak Diode Recovery dV/dt
Power Dissipation (TC=25°C)
PD
- Derate above 25C
TJ/TSTG
Operating Junction and Storage Temperature
Value
900
±30
9
6
36
900
28
4.0
280
2.22
-55 to +150
Unit
V
V
A
A
A
mJ
mJ
V/ns
W
W/°C
°C
Publication Order Number: [MS12N60]
© Bruckewell Technology Corporation Rev. A -2014
MS9N90
900V N-Channel MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Maximum lead temperature for soldering purposes,
TL
1/8'' from case for 5 seconds
• Drain current limited by maximum junction temperature
Value
300
Unit
°C
Thermal Resistance Characteristics
Symbol
Parameter
RθJC Junction-to-Case
RθJA Junction-to-Ambient
Typ.
Max.
Units
-- 0.75
°C/W
-- 62.5
On Characteristics
Symbol
Parameter
VGS Gate Threshold Voltage
*RDS(ON)
Static Drain-Source
On-Resistance
Test Conditions
VDS = VGS, ID = 250μA
VGS = 10 V , ID = 4.5 A
Min Typ. Max. Units
3.0 5.0 V
-- 1.10 1.40 Ω
Off Characteristics
Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
△BVDSS /△TJ
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
Test Conditions
VGS = 0 V , ID = 250μA
ID = 250μA, Referenced to
25°C
VDS = 900 V , VGS = 0 V
VDS = 720 V , VC = 125°C
VDS = 30 V, VDS = 0 V
VDS = -30 V, VDS = 0 V
Min Typ. Max. Units
900 -- -- V
-- 1.05 -- V/°C
-- -- 10 μA
100
-- -- 100 μA
-- -- -100 nA
Dynamic Characteristics
Symbol Parameter
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Test Conditions
Min Typ. Max. Units
-- 2200 -- pF
VDS = 25 V, VGS = 0 V,
--
180
-- pF
f = 1.0MHz
-- 15 -- pF
Publication Order Number: [MS12N60]
© Bruckewell Technology Corporation Rev. A -2014
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MS9N90 mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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