L74VHC1G14 반도체 회로 부품 판매점
Schmitt-Trigger Inverter
|
|
 LRC |
LESHAN RADIO COMPANY, LTD.
Schmitt-Trigger Inverter
L74VHC1G14
The L74VHC1G14 is a single gate CMOS Schmitt–trigger inverter fabricated with silicon gate CMOS technology. It achieves high
speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The
L74VHC1G14 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the
L74VHC1G14 to be used to interface 5 V circuits to 3 V circuits.
The L74VHC1G14 can be used to enhance noise immunity or to square up slowly changing waveforms.
• High Speed: t PD = 4.0 ns (Typ) at V CC = 5 V
• Low Power Dissipation: I CC = 2 mA (Max) at T A = 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 101; Equivalent Gates = 25
5
4
MARKING DIAGRAMS
1
2
3
SC–70/SC–88A/SOT–353
DF SUFFIX
5
4
VAd
Pin 1
d = Date Code
Figure 1. Pinout (Top View)
1
2
3
SOT–23/TSOP–5/SC–59
DT SUFFIX
VAd
Pin 1
d = Date Code
Figure 2. Logic Symbol
PIN ASSIGNMENT
1 NC
2 IN A
3 GND
4 OUT Y
5 V CC
www.DataSheet4U.com
FUNCTION TABLE
Inputs
A
L
H
Output
Y
H
L
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 5 of this data sheet.
1/6
LESHAN RADIO COMPANY, LTD.
L74VHC1G14
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CC
V IN
V OUT
DC Supply Voltage
DC Input Voltage
DC Output Voltage
V CC=0
High or Low State
– 0.5 to + 7.0
– 0.5 to +7.0
– 0.5 to +7.0
–0.5 to V cc + 0.5
V
V
V
I IK
I OK
I OUT
I CC
PD
θ JA
TL
TJ
T stg
Input Diode Current
Output Diode Current
DC Output Current, per Pin
V < GND; V > V
OUT
OUT
CC
DC Supply Current, V CC and GND
Power dissipation in still air
SC–88A, TSOP–5
Thermal resistance
SC–88A, TSOP–5
Lead Temperature, 1 mm from Case for 10 s
Junction Temperature Under Bias
Storage temperature
–20
+20
+ 25
+50
200
333
260
+ 150
–65 to +150
mA
mA
mA
mA
mW
°C/W
°C
°C
°C
V ESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
>2000
> 200
V
Charged Device Model (Note 4)
N/A
I LATCH–UP
Latch–Up Performance Above V CC and Below GND at 125°C (Note 5)
± 500
mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V CC DC Supply Voltage
V IN DC Input Voltage
V OUT
DC Output Voltage
T A Operating Temperature Range
Min Max Unit
2.0 5.5 V
0.0 5.5 V
0.0
V CC
V
– 55 + 125 °C
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Time,
Time,
Temperature °C
Hours
Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
1 10 100 1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
2/6
|
PDF 파일 내의 페이지 : 총 6 페이지
제조업체: LRC
( lrc )
L74VHC1G14 inverter
데이터시트 다운로드 :
[ L74VHC1G14.PDF ]
[ L74VHC1G14 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
L74VHC1G125
Noninverting 3-State Buffer - LRC
L74VHC1G132
2-Input NAND Schmitt Trigger - LRC
L74VHC1G135
2-Input NANDSchmitt-Trigger - LRC
L74VHC1G14
Schmitt-Trigger Inverter - LRC