|
Toshiba |
TC74VHCT04AF/AFN/AFT/AFK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74VHCT04AF,TC74VHCT04AFN,TC74VHCT04AFT,TC74VHCT04AFK
Hex Inverter
The TC74VHCT04A is an advanced high speed CMOS
INVERTER fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent
Bipolar Schottky TTL while maintaining the CMOS low power
dissipation.
The input voltage are compatible with TTL output voltage.
This device may be used as a level converter for interfacing 3.3
V to 5 V system.
Input protection and output circuit ensure that 0 to 5.5 V can
be applied to the input and output (Note) pins without regard to
the supply voltage. These structure prevents device destruction
due to mismatched supply and input/output voltages such as
battery back up, hot board insertion, etc.
Note: VCC = 0 V
Features
• High speed: tpd = 4.7 ns (typ.) at VCC = 5 V
• Low power dissipation: ICC = 2 μA (max) at Ta = 25°C
• Compatible with TTL outputs: VIL = 0.8 V (max)
VIH = 2.0 V (min)
• Power down protection is provided on all inputs and outputs.
• Balanced propagation delays: tpLH ∼− tpHL
• Low noise: VOLP = 1.0 V (max)
• Pin and function compatible with the 74 series
(74AC/HC/F/ALS/LS etc.) 04 type.
Note: xxxFN (JEDEC SOP) is not available in
Japan.
TC74VHCT04AF
TC74VHCT04AFN
TC74VHCT04AFT
TC74VHCT04AFK
Weight
SOP14-P-300-1.27A
SOL14-P-150-1.27
TSSOP14-P-0044-0.65A
VSSOP14-P-0030-0.50
: 0.18 g (typ.)
: 0.12 g (typ.)
: 0.06 g (typ.)
: 0.02 g (typ.)
1 2007-10-01
Pin Assignment
TC74VHCT04AF/AFN/AFT/AFK
IEC Logic Symbol
1A 1
1Y 2
2A 3
2Y 4
3A 5
3Y 6
GND 7
Truth Table
AY
LH
HL
(top view)
14 VCC
13 6A
12 6Y
11 5A
10 5Y
9 4A
8 4Y
1A (1)
2A (3)
3A (5)
4A (9)
5A (11)
6A (13)
1
(2) 1Y
(4) 2Y
(6) 3Y
(8) 4Y
(10) 5Y
(12) 6Y
Absolute Maximum Ratings (Note 1)
Characteristics
Symbol
Rating
Unit
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC VCC/ground current
Power dissipation
Storage temperature
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
PD
Tstg
−0.5 to 7.0
−0.5 to 7.0
−0.5 to 7.0
−0.5 to VCC + 0.5
−20
±20
±25
±50
180
−65 to 150
(Note 2)
(Note 3)
(Note 4)
V
V
V
mA
mA
mA
mA
mW
°C
Note 1:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: VCC = 0 V
Note 3: High or low state. IOUT absolute maximum rating must be observed.
Note 4: VOUT < GND, VOUT > VCC
2 2007-10-01
|