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Siemens Semiconductor Group |
NPN/PNP Silicon Digital Tansistor Array
• Switching circuit, inverter, interface circuit,
drive circuit
• Two (galvanic) internal isolated NPN/PNP
Transistor in one package
• Built in bias resistor (R1=10kΩ, R2=10kΩ)
Tape loading orientation
BCR 10PN
Type
Marking Ordering Code Pin Configuration
Package
BCR 10PN W1s
Q62702-C2411 1=E1 2= B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 115°C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Values
50
50
10
20
100
250
150
- 65 ... + 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction ambient 1)
Junction - soldering point
RthJA
RthJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
≤ 275
≤ 140
K/W
Semiconductor Group
1
Nov-26-1996
BCR 10PN
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Collector cutoff current
VCB = 40 V, IE = 0
Emitter cutoff current
VEB = 10 V, IC = 0
DC current gain
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
IC = 2 mA, VCE = 0.3 V
Input resistor
Resistor ratio
AC Characteristics for NPN Type
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
1) Pulse test: t < 300µs; D < 2%
V(BR)CEO
50
V(BR)CBO
50
ICBO
-
IEBO
-
hFE
30
VCEsat
-
Vi(off)
0.8
Vi(on)
1
R1
R1/R2
7
0.9
fT
-
Ccb
-
-
-
-
-
-
-
-
-
10
1
130
3
max.
-
-
100
0.75
-
0.3
1.5
2.5
13
1.1
-
-
Unit
V
nA
mA
-
V
kΩ
-
MHz
pF
Semiconductor Group
2
Nov-26-1996
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