FG4000GX-90DA 반도체 회로 부품 판매점
HIGH POWER INVERTER USE PRESS PACK TYPE
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 Mitsubishi Electric Semiconductor |
FG4000GX-90DA
MITSUBISHI GATE TURN-OFF THYRISTORS
FG4000GX-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
OUTLINE DRAWING
Dimensions in mm
GATE (WHITE)
q ITQRM Repetitive controllable on-state current ........... 4000A
q IT(AV) Average on-state current .....................1200A
q VDRM Repetitive peak off state voltage ...................4500V
q Anode short type
φ 85 ± 0.2
555 ± 10
AUXILIARY CATHODE
CONNECTOR (RED)
φ 3.5 DEPTH 2.2 ± 0.2
CATHODE
TYPENAME
φ 85 ± 0.2
φ 120 MAX
ANODE
φ 3.5 DEPTH 2.2 ± 0.2
APPLICATION
Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters.
MAXIMUM RATINGS
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
VRSM
Non-repetitive peak reverse voltage
VR(DC)
VDRM
VDSM
VD(DC)
VLTDS
DC reverse voltage
Repetitive peak off-state voltage+
Non-repetitive peak off-state voltage+
DC off-state voltage+
Long term DC stability voltage+
+ : VGK = –2V
Voltage class
90DA
17
17
17
4500
4500
3600
3000
Symbol
ITQRM
IT(RMS)
IT(AV)
ITSM
I2t
diT/dt
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Tstg
—
—
Parameter
Repetitive controllable on-state current
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
Current-squared, time integration
Critical rate of rise of on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate reverse current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
VDM = 4500V, Tj = 125°C, CS = 4.0µF, LS = 0.2µH
f = 60Hz, sine wave θ = 180°, Tf = 70°C
One half cycle at 60Hz
One cycle at 60Hz
VD = 3400V, IGM = 25A, Tj = 125°C
Recommended value 42
Standard value
Ratings
4000
1800
1200
25
2.6 × 106
500
10
17
130
900
520
33
130
300
–40 ~ +125
–40 ~ +150
35 ~ 48
1220
Unit
V
V
V
V
V
V
V
Unit
A
A
A
kA
A2s
A/µs
V
V
A
A
W
kW
W
W
°C
°C
kN
g
Aug.1998
MITSUBISHI GATE TURN-OFF THYRISTORS
FG4000GX-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
VTM
IRRM
IDRM
IRG
dv/dt
tgt
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state voltage
Turn-on time
Tj = 125°C, ITM = 4000A, Instantaneous measurment
Tj = 125°C, VRRM Applied
Tj = 125°C, VDRM Applied, VGK = –2V
Tj = 125°C, VRG = 17V
Tj = 125°C, VD = 2250V, VGK = –2V
Tj = 125°C, ITM = 4000A, IGM = 25A, VD = 3400V
tgq
IGQM
VGT
IGT
Rth(j-f)
Turn-off time
Peak gate turn-off current
Gate trigger voltage
Gate trigger current
Thermal resistance
Tj = 125°C, ITM = 4000A, VDM = 4500V, diGQ/dt = –50A/µs
VRG = 17V, CS = 4.0µF, LS = 0.2µH
DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C
Junction to fin
Min
—
—
—
—
1000
—
—
—
—
—
—
Limits
Typ
—
—
—
—
—
—
—
900
—
—
—
Max
4.3
10
150
10
—
8
35
—
1.5
2500
0.011
Unit
V
mA
mA
mA
V/µs
µs
µs
A
V
mA
°C/W
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
104
7 Tj = 125°C
5
3
2
103
7
5
3
2
102
0 1 2 3 4 5 6 7 8 9 10
ON-STATE VOLTAGE (V)
GATE CHARACTERISTICS
103
7
5
3
2
102
7
5
3
2
VFGM = 10V
PFGM = 520W
101
7
5
VGT = 1.5V
3 PFG(AV) = 130W
2
100
7
5
Tj = 25°C
3
2
IGT = 2500mA
IFGM = 130A
10–1
102 2 3 5 7103 2 3 5 7104 2 3 5 7105 2 3 5 7 106
GATE CURRENT (mA)
RATED SURGE ON-STATE CURRENT
30
25
20
15
10
5
100 2 3 5 7 101 2 3 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
100 2 3 5 7 101
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
TIME (S)
Aug.1998
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제조업체: Mitsubishi Electric Semiconductor
( mitsubishi )
FG4000GX-90DA inverter
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상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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