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Dynex |
DIM250PKM33-TL000
IGBT Chopper Module
DS6117-1 July 2013 (LN30666)
FEATURES
Low VCE(sat) Device
10µs Short Circuit Withstand
High Thermal Cycling Capability
High Current Density Enhanced DMOS SPT
Isolated AlSiC Base with AlN Substrates
KEY PARAMETERS
VCES
VCE(sat) * (typ)
IC (max)
IC(PK) (max)
3300V
2.0V
250A
500A
* Measured at the auxiliary terminals
APPLICATIONS
Choppers
Motor Controllers
Power Supplies
Traction Auxiliaries
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM250PKM33-TL000 is a Low VCE(sat) 3300V,
n-channel enhancement mode, insulated gate bipolar
transistor (IGBT) chopper module configured with the
upper arm of the bridge controlled. The IGBT has a
wide reverse bias safe operating area (RBSOA). This
device is optimised for traction drives and other
applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
1(E1/K)
2(C1)
5(E1)
4(G1)
8(C1)
3(A)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM250PKM33-TL000
Note: When ordering, please use the complete part
number
Outline type code: P
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
1/8
DIM250PKM33-TL000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
VCES
VGES
IC
IC(PK)
Pmax
I2t
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I2t value – IGBT Arm
Diode I2t value – Diode Arm
Visol Isolation voltage – per module
QPD Partial discharge – per module
VGE = 0V
Test Conditions
Tcase = 115°C
1ms, Tcase = 140°C
Tcase = 25°C, Tj = 150°C
VR = 0, tp = 10ms, Tj = 150ºC
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
IEC1287, V1 = 3500V, V2 = 2600V, 50Hz RMS
Max. Units
3300 V
±20 V
250 A
500 A
2.6 kW
20 kA2s
20 kA2s
6000 V
10 pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
33mm
Clearance:
20mm
CTI (Comparative Tracking Index):
>600
Symbol
Parameter
Rth(j-c)
Rth(j-c)
Rth(c-h)
Thermal resistance – transistor
Thermal resistance – diode
(IGBT Arm)
Thermal resistance – diode
(Diode Arm)
Thermal resistance –
case to heatsink (per module)
Tj Junction temperature
Tstg Storage temperature range
Screw torque
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting – M6
Electrical connections – M5
Min Typ. Max Units
- - 48 °C/kW
- - 96 °C/kW
- - 96 °C/kW
- - 16 °C/kW
- - 150 °C
- - 150 °C
-40 - 125 °C
- - 5 Nm
- - 4 Nm
2/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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