H40T60 반도체 회로 부품 판매점
IGBT
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 Infineon |
Soft Switching Series
IHW40N60T
q
Low Loss DuoPack : IGBT in TrenchStop® -technology with anti-parallel diode
Features:
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
C
• Short circuit withstand time – 5µs
• TrenchStop® and Fieldstop technology for 600 V applications
G
E
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
PG-TO-247-3
• Low Gate Charge
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
• Inductive Cooking
• Soft Switching Applications
Type
VCE
IC
VCE(sat),Tj=25°C Tj,max
Marking
IHW40N60T 600V 40A
1.55V
175°C H40T60
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Short circuit withstand time2)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
600
80
40
120
120
40
20
60
±20
±25
5
303
-40...+175
-55...+175
260
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.3 Sep. 08
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Soft Switching Series
IHW40N60T
q
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
0.49
0.76
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
RGint
VGE=0V, IC=0.5mA
VGE = 15V, IC=40A
Tj=25°C
Tj=175°C
VGE=0V, IF=20A
Tj=25°C
Tj=175°C
IC=0.8mA,
VCE=VGE
VCE=600V,
VGE=0V
Tj=25°C
Tj=175°C
VCE=0V,VGE=20V
VCE=20V, IC=40A
min.
600
-
-
-
-
4.1
-
-
-
-
Value
Typ.
-
1.55
1.9
1.1
1.05
4.9
-
-
-
22
-
Unit
max.
-V
2.05
-
-
-
5.7
µA
40
1000
100
-
nA
S
Ω
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=40A
VGE=15V
-
-
-
-
-
2423
113
72
215
13
- pF
-
-
- nC
- nH
Power Semiconductors
2
Rev. 2.3 Sep. 08
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H40T60 igbt
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