IXGH30N120C3H1 반도체 회로 부품 판매점
High speed PT IGBTs
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 IXYS Corporation |
Preliminary Technical Information
GenX3TM 1200V IGBT IXGH30N120C3H1
High speed PT IGBTs for
10-50kHz Switching
VCES
IC100
VCE(sat)
tfi(typ)
= 1200V
= 24A
≤ 4.2V
= 42ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC100
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
Md
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 100°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE= 15V, TJ = 125°C, RG = 5Ω
Clamped Inductive Load
TC = 25°C
Mounting Torque
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
48 A
24 A
115 A
20 A
250 mJ
ICM = 60
@VCE ≤ 1200
250
A
V
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
300 °C
260 °C
6g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES VGE= 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 24A, VGE = 15V, Note 2
TJ = 125°C
Characteristic Values
Min.
Typ. Max.
1200
V
3.0 5.0 V
100 μA
1.5 mA
±100 nA
3.6 4.2 V
3.2 V
TO-247AD
G
C
E
TAB
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z Optimized for Low Conduction and
Switching Losses
z Square RBSOA
z Anti-Parallel Ultra Fast Diode
z Avalanche Rated
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z AC Motor Speed Control
z DC Servo and Robot Drives
z DC Choppers
z Uninterruptible Power Supplies (UPS)
z Switch-Mode and Resonant-Mode
Power Supplies
© 2009 IXYS CORPORATION, All rights reserved
DS100123(03/09)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs IC = 24A, VCE = 10V, Note 2
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge IC = 24A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 25°C
IC = 24A, VGE = 15V
VCE = 600V, RG = 5Ω
Note 1
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 125°C
IC = 24A, VGE = 15V
VCE = 600V, RG = 5Ω
Note 1
RthJC
RthCK
Characteristic Values
Min.
Typ.
Max.
10 17
S
1810
185
50
pF
pF
pF
80 nC
11 nC
37 nC
18 ns
33 ns
1.45 mJ
106 ns
42 ns
0.47 0.85 mJ
20 ns
40 ns
2.50 mJ
135 ns
280 ns
1.30 2.10 mJ
0.50 °C/W
0.21 °C/W
IXGH30N120C3H1
TO-247 (IXGH) AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VF IF = 20A, VGE = 0V
TJ = 125°C
IRM IF = 20A, -diF/dt = 750A/μs, VR = 800V
trr VGE = 0V
RthJC
Characteristic Values
Min. Typ. Max.
3.0 V
2.8 V
19 A
70 ns
0.9 °C/W
Notes:
1.
Switching Times May Increase
Higher TJ or Increased RG.
for
VCE
(Clamp)
>
0.5
•
VCES,
2. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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