IXGH30N120B3D1 반도체 회로 부품 판매점
GenX3 1200V IGBTs
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 IXYS Corporation |
GenX3TM 1200V IGBT
High speed Low Vsat PT
IGBTs 3-20 kHz switching
IXGH30N120B3D1
IXGT30N120B3D1
VCES
IC110
VCE(sat)
tfi(typ)
= 1200V
= 30A
≤£ 3.5V
= 204ns
Symbol
VCES
VCGR
VGES
VGEM
IC110
IF110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
Md
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped inductive load
TC = 25°C
Mounting torque (TO-247)
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
TO-247
TO-268
Maximum Ratings
1200
1200
V
V
±20
±30
30
28
150
ICM = 60
@ 0.8 • VCE
300
V
V
A
A
A
A
W
-55 ... +150
150
-55 ... +150
1.13 / 10
300
260
6
4
°C
°C
°C
Nm/lb.in.
°C
°C
g
g
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ
=
25°C, unless
Min.
otherwise specified)
Typ. Max.
IC = 250μA, VCE = VGE
VCE = VCES
VGE = 0V
TJ = 125°C
VCE = 0V, VGE = ±20V
IC
=
30A,
VGE
=
15V,
Note
1
TJ
=
125°C
3.0 5.0 V
300 μA
1.5 mA
±100 nA
2.96
2.95
3.5 V
V
TO-247 AD (IXGH)
G
CE
TO-268 (IXGT)
C (TAB)
GE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z Optimized for low conduction and
switching losses
z Square RBSOA
z Anti-parallel ultra fast diode
z International standard packages
Advantages
z High power density
z Low gate drive requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Welding Machines
© 2008 IXYS CORPORATION, All rights reserved
DS99566A(05/08)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs IC = 30A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge IC = 30A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 30A, VGE = 15V, Notes 2
VCE = 0.8 • VCES, RG = 5Ω
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCS
Inductive load, TJ = 125°C
IC = 30A,VGE = 15V, Notes 2
VCE = 0.8 • VCES,RG = 5Ω
Characteristic Values
Min. Typ. Max.
11 19
S
1750
120
46
pF
pF
pF
87 nC
15 nC
39 nC
16
37
3.47
127
204
2.16
ns
ns
mJ
200 ns
380 ns
4.0 mJ
18 ns
38 ns
6.70 mJ
216 ns
255 ns
5.10 mJ
0.42 °C/W
0.21 °C/W
IXGH30N120B3D1
IXGT30N120B3D1
TO-247 AD Outline
∅P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
∅P 3.55
Q 5.89
R 4.32
3.65
6.40
5.49
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
TO-268 Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise
Min. Typ.
specified)
Max.
VF IF = 30A,VGE = 0V, Note 1
TJ = 150°C
2.8 V
1.6 V
IRM
trr
RthJC
IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C
VR = 300V
TJ = 100°C
4A
100 ns
0.9 °C/W
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times may increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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( ixys )
IXGH30N120B3D1 igbt
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