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Semikron International |
SKM 400GB126D ...
SEMITRANS® 3
Trench IGBT Module
SKM 400GB126D
SKM 400GAL126D
Preliminary Data
Features
! " #
Typical Applications
$
%
&'
%
GB GAL
Absolute Maximum Ratings
Symbol Conditions
IGBT
#
+ () *
+ -). *
#34
#34("#
5
!.. 7 5 8 (. 7
9 -(..
Inverse Diode
#; + -). *
#;34
#;34("#;
#; 4
-. 7
<
Freewheeling Diode
#; + -). *
#;34
#; 4
Module
#=34 >
+
#;34("#;
-. 7
<
$ -
<
() *
%
Values
Units
() *
1. *
+ -() *
-(..
/0.
22.
!..
6 (.
-.
$
$
$
:
() *
1. *
+ -). *
() *
1. *
+ -). *
/..
(0.
!..
((..
/..
(0.
!..
((..
)..
? /. <<<@ -).
? /. <<<@ -()
/...
$
$
$
$
$
$
$
$
$
*
*
Characteristics
() *
%
Symbol Conditions
min. typ. max. Units
IGBT
5=>
5 # -( $
) )1 !)
#
.
= >
5 .
5 -)
#
2.. $ 5 -)
+ () *
+ () *
+ -() *
+ ()*
+ -()*
+ ()* <
+ -()* <
() 5 .
- 4C
. -) . /) $
- -(
.A
( 2 2 ( B
2 0 B
- 0 ( -)
(
(2 -
;
- A
;
- (
;
D5 5 ?1 <<< @(.
(1..
35
%=
>
%=>
+ *
35
( B
35 ( B
!..
#
2..$
+ -() *
5 6-)
() E
22.
).
(A F
!).
--.
/1 F
3=+?>
#5G
. .1 HIJ
1
11-09-2006 SEN
© by SEMIKRON
SKM 400GB126D ...
SEMITRANS® 3
Trench IGBT Module
SKM 400GB126D
SKM 400GAL126D
Preliminary Data
Features
! " #
Typical Applications
$
%
&'
%
Characteristics
Symbol Conditions
Inverse Diode
;
#;
2.. $7 5 .
;.
;
#334
D
#;
2.. $
%I% !2.. $I:
5 ?-) 7 !..
3=+?>K
%%
Freewheeling Diode
;
#;
2.. $7 5 .
;.
;
#334
D
3=+?>K
Module
L
3M@M
#;
2.. $
%I% !2.. $I:
5 ?-) 7 !..
%%
<
?
3=? >
4
4
%
N 4!
4!
+ () * <
+ -() * <
+ () *
+ -() *
+ () *
+ -() *
+ -() *
+ () * <
+ -() * <
+ () *
+ -() *
+ () *
+ -() *
+ -() *
() *
-() *
min.
2
()
typ.
-!
-!
-
.1
(
(0
2A.
00
(0
-!
-!
-
.1
(
(0
2A.
00
(0
-)
. 2)
.)
max. Units
-1
-1
--
.A
( 2 B
2 B
$
:
F
. -1 HIJ
-1
-1
--
.A
(2
2
$
:
F
. -1 HIJ
(.
. .21
)
)
2()
B
B
HIJ
O
O
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB GAL
2
11-09-2006 SEN
© by SEMIKRON
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