FGPF4633 반도체 회로 부품 판매점
PDP IGBT
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 Fairchild Semiconductor |
FGPF4633
330V PDP IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) = 1.55 V @ IC = 70A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• PDP System
February 2010
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
GC E
TO-220F
(Potted)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC pulse(1)*
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
@ TC = 25oC
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC(IGBT)
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 5µsec
* Ic_pluse limited by max Tj
Ratings
330
± 30
300
30.5
12.2
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
4.1
62.5
Units
V
V
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2010 Fairchild Semiconductor Corporation
FGPF4633 Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
Package Marking and Ordering Information
Device Marking
FGPF4633
Device
FGPF4633TU
Package
TO-220F
Packaging
Type
Tube
Qty per Tube
50ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
∆BVCES
∆TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 250µA, VCE = VGE
IC = 20A, VGE = 15V
IC = 40A, VGE = 15V
IC = 70A, VGE = 15V,
TC = 25oC
IC = 70A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 200V, IC = 20A
RG = 5Ω, VGE = 15V
Resistive Load, TC = 25oC
VCC = 200V, IC = 20A,
RG = 5Ω, VGE = 15V,
Resistive Load, TC = 125oC
VCE = 200V, IC = 20A
VGE = 15V
330 - - V
- 0.3 - V/oC
- - 100 µA
-
-
±400
nA
2.4 3.3 4.0
- 1.1 -
- 1.35 -
1.55 1.8
-
- 1.61 -
V
V
V
V
- 1715 -
- 75 -
- 55 -
pF
pF
pF
- 8-
- 30 -
- 52 -
- 260 -
- 8-
- 32 -
- 53 -
- 341 -
- 60 -
- 8-
- 20 -
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
FGPF4633 Rev. A
2 www.fairchildsemi.com
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( fairchild )
FGPF4633 igbt
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