FZ900R16KF1 반도체 회로 부품 판매점
IGBT
|
|
 Eupec |
European Power-
Semiconductor and
Electronics Company
GmbH + Co. KG
Marketing Information
FZ 900 R 16 KF 1
screwing depth
max. 8
31,5
61,5
18
130
114
M8
M4
28
C
www.DataSheet.co.kr
C
E
7
E
G
C
16,5
2,5
18,5
E
C
C
G
E
E
external connection to be
done
C
E
external connection to be
done
A15/97 Mod-E/ 21.Jan 1998 G.Schulze
Datasheet pdf - http://www.DataSheet4U.net/
FZ 900 R 16 KF1
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collctor current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Isolations-Prüfspannung
insulation test voltage
Charakteristische Werte / Characteristic values: Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
Eingangskapazität
Kollektor-Emitter Reststrom
gate threshold voltage
input capacity
collector-emitter cut-off current
Gate-Emitter Reststrom
Emitter-Gate Reststrom
Einschaltzeit (induktive Last)
gate leakage current
gate leakage current
turn-on time (inductive load)
Speicherzeit (induktive Last)
storage time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
Abschaltverlustleistung pro Puls
turn-on energy loss per puls
turn-off energy loss per puls
Charakteristische Werte / Characteristic values
Inversdiode / Inverse diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
Höchstzul. Sperrschichttemperatur
Betriebstemperatur
Lagertemperatur
thermal resistance, case to heatsink
max. junction temperature
operating temperature
storage temperature
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
internal insulation
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
Gewicht
weight
tp=1 ms
tC=25°C, Transistor /transistor
tp=1ms
RMS, f=50 Hz, t= 1 min.
iC=1,2kA, vGE=15V, tvj=25°C
iC=1,2kA, vGE=15V, tvj=125°C
iC=48mA, vCE=vGE, tvj=25°C
fO=1MHz,tvj=25°C,vCE=25V, vGE=0V
vCE=1200V, vGE=0V, tvj=25°C
vCE=1200V, vGE=0V, tvj=125°C
vCE=0V, vGE=20V, tvj=25°C
vCE=0V, vEG=20V, tvj=25°C
iC=1,2kA,vCE=600V
vL = ±15V, RG = 0,82 , tvj=25°
vL = ±15V, RG = 0,82 , tvj=125°
iC=1,2kA,vCE=600V
vL = ±15V, RG = 0,82 , tvj=25°
vL = ±15V, RG = 0,82 , tvj=125°
iC=1,2kA,vCE=600V
vL = ±15V, RG = 0,82 , tvj=25°
vL = ±15V, RG = 0,82 , tvj=125°
iC=1,2kA, vCE=600V, L s=70nH
vL=±15V,RG=0,82 ,Tvj=125°C
iC=1,2kA, vCE=600V, L s=70nH
www.DataSheet.co.kr
vL=±15V,RG=0,82 ,Tvj=125°C
iF=1,2kA, vGE=0V, tvj=25°C
iF=1,2kA, vGE=0V, tvj=125°C
iF=1,2kA, vRM=600V, vEG= 10V
-diF/dt = 6 kA/µs, t vj= 25°C
tvj= 125°C
iF=1,2kA, vRM=600V, vEG= 10V
-diF/dt = 6 kA/µs, t vj= 25°C
tvj= 125°C
Transistor / transistor, DC
Transistor,DC,pro Zweig/per arm
pro Modul / per Module
pro Modul / per Module
Transistor / transistor
terminals M6 / tolerance +/-15%
terminals M4 / tolerance +/-15%
terminals M8
VCES
IC
ICRM
Ptot
VGE
IF
IFRM
VISOL
vCE sat
vGE(th)
Cies
iCES
iGES
iEGS
ton
ts
tf
min.
-
-
4,5
-
-
-
-
-
typ.
2,7
3,3
5,5
90
16
100
-
-
0,7
- 0,8
- 0,9
- 1,0
- 0,10
- 0,15
Eon - 170
Eoff -
190
1200 V
1200 A
2400 A
7800 W
± 20 V
1200 A
2400 A
2,5 kV
max.
3,2 V
3,9 V
6,5 V
- nF
- mA
200 mA
400 nA
400 nA
- µs
- µs
- µs
- µs
- µs
- µs
- mWs
- mWs
vF
IRM
Qr
RthJC
RthCK
tvj max
tc op
tstg
M1
M2
G
- 2,2
- 2,0
- 400
- 700
- 50
- 150
2,7 V
2,5 V
-A
-A
- µAs
- µAs
0,016 °C/W
0,032 °C/W
0,008 °C/W
150 °C
-40...+125 °C
-40...+125 °C
AI2O3
5 Nm
2 Nm
8...10 Nm
ca. 1500 g
Bedingung für den Kurzschlußschutz / Conditions for short-circuit protection t
fg = 10 µs
VCC= 750 V
vL= ±15 V
vCEM = 900 V
RGF = RGR= 0,82
tvj = 125°C
iCMK1 10000 A
iCMK2 8000 A
Unabhängig davon gilt bei abweichenden Bedingungen / with regard to other conditions
v CEM= V CES- 15nH x |di c/dt|
Mit di eser t echnischen Information w erden H albleiterbauelemente sp ezifiziert, j edoch k eine Eig enschaften z ugesichert. Si e gilt i n V erbindung mit d en
zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in
combination with the belonging technical notes.
Datasheet pdf - http://www.DataSheet4U.net/
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FZ900R16KF1 igbt
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