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Infineon Technologies |
ResonantSwitchingSeries
ReverseconductingIGBTwithmonolithicbodydiode
IHW15N120R3
Datasheet
IndustrialPowerControl
ResonantSwitchingSeries
IHW15N120R3
ReverseconductingIGBTwithmonolithicbodydiode
Features:
•Powerfulmonolithicbodydiodewithlowforwardvoltage
designedforsoftcommutationonly
•TRENCHSTOPTMtechnologyapplicationsoffers:
-verytightparameterdistribution
-highruggedness,temperaturestablebehavior
-lowVCEsat
-easyparallelswitchingcapabilityduetopositive
temperaturecoefficientinVCEsat
•LowEMI
•QualifiedaccordingtoJESD-022fortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
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Applications:
•Inductivecooking
•Inverterizedmicrowaveovens
•Resonantconverters
•Softswitchingapplications
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KeyPerformanceandPackageParameters
Type
VCE IC VCEsat,Tvj=25°C
IHW15N120R3
1200V 15A
1.48V
Tvjmax
175°C
Marking
H15R1203
Package
PG-TO247-3
2 Rev.2.4,2015-01-26
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