FGH80N60FD 반도체 회로 부품 판매점
80A Field Stop IGBT
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 Fairchild Semiconductor |
FGH80N60FD
600 V Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
• High Input Impedance
• Fast Switching
• RoHS Complaint
Applications
• Induction Heating, PFC, Telecom, ESS
E
C
G
November 2013
General Description
Using novel field stop IGBT technology, Fairchild's field stop
IGBTs offer the optimum performance for induction heating,
telecom, ESS and PFC applications where low conduction and
switching losses are essential.
C
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25C
@ TC = 100C
@ TC = 25C
@ TC = 25C
@ TC = 100C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
Ratings
600
20
80
40
160
290
116
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
0.43
1.5
40
Unit
V
V
A
A
A
W
W
C
C
C
Unit
C/W
C/W
C/W
©2007 Fairchild Semiconductor Corporation
FGH80N60FD Rev. C2
1
www.fairchildsemi.com
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method
FGH80N60FDTU FGH80N60FD TO-247
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES /
TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0 V, IC = 250 uA
VGE = 0 V, IC = 250 uA
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 250 uA, VCE = VGE
IC = 40 A, VGE = 15 V
IC = 40 A, VGE = 15 V,
TC = 125C
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCC = 400 V, IC = 40 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 25C
VCC = 400 V, IC = 40 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 125C
VCE = 400 V, IC = 40 A,
VGE = 15 V
600 --
--
V
-- 0.6 -- V/C
-- -- 250 uA
-- -- ±400 nA
4.5 5.5 7.0
-- 1.8 2.4
-- 2.05 --
V
V
V
-- 2110 --
-- 200 --
-- 60 --
pF
pF
pF
-- 21 -- ns
-- 56 -- ns
-- 126 --
ns
--
50 100
ns
-- 1 1.5 mJ
--
0.52 0.78
mJ
--
1.52 2.28
mJ
-- 20 -- ns
-- 54 -- ns
-- 131 --
ns
-- 70 -- ns
-- 1.1 -- mJ
-- 0.78 --
mJ
-- 1.88 --
mJ
-- 120 --
nC
-- 14 -- nC
-- 58 -- nC
©2007 Fairchild Semiconductor Corporation
FGH80N60FD Rev. C2
2
www.fairchildsemi.com
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( fairchild )
FGH80N60FD igbt
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