IXGT30N60C2 반도체 회로 부품 판매점
HiPerFAST IGBT
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 IXYS |
HiPerFASTTM IGBT
C2-Class High Speed IGBTs
IXGH 30N60C2
IXGT 30N60C2
VCES
IC25
VCE(sat)
tfi typ
www.DataSheet4U.com
= 600 V
= 70 A
= 2.7 V
= 32 ns
Symbol
Test Conditions
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
VGES
VGEM
Continuous
Transient
IC25 TC = 25°C (limited by leads)
IC110
TC = 110°C
ICM TC = 25°C, 1 ms
SSOA
(RBSOA)
PC
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ ≤ 600 V
TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
Md
Weight
Mounting torque (M3) (TO-247)
TO-247
TO-268
Maximum Ratings
600 V
600 V
±20 V
±30 V
70 A
30 A
150 A
ICM = 60
A
190
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
250 °C
1.13/10Nm/lb.in.
6g
4g
TO-268 (IXGT)
G
E
TO-247 (IXGH)
C (TAB)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z Very high frequency IGBT
z Square RBSOA
z High current handling capability
z MOS Gate turn-on
- drive simplicity
Applications
Symbol
Test Conditions
VGE(th)
ICES
IGES
VCE(sat)
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 24 A, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
2.5 5.0 V
TJ = 25°C
TJ = 150°C
TJ = 25°C
TJ = 25°C
50 µA
1 mA
±100 nA
2.7 V
2.0 V
z PFC circuits
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z AC motor speed control
z DC servo and robot drives
z DC choppers
© 2005 IXYS All rights reserved
DS99168A(01/05)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
IC = 24 A; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 24 A, VGE = 15 V, VCE = 300 V
Inductive load, TJ = 25°C
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5 Ω
Inductive load, TJ = 125°C
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5 Ω
(TO-247)
18 28
S
1430
110
40
pF
pF
pF
70 nC
10 nC
23 nC
13
15
70
60
0.29
ns
ns
140 ns
ns
0.30 mJ
13
17
0.22
120
130
0.59
ns
ns
mJ
ns
ns
mJ
0.65 K/W
0.25
K/W
IXGH 30N60C2
IXGT 30N60C2
www.DataSheet4U.com
TO-247 AD Outline
∅P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
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IXGT30N60C2 igbt
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