IXGT25N160 반도체 회로 부품 판매점
High Voltage IGBT
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 IXYS |
High Voltage IGBT
For Capacitor Discharge
Applications
Preliminary Data Sheet
IXGH 25N160
IXGT 25N160
www.DataSheet4U.com
V = 1600 V
I CES = 75 A
VC25 = 2.5 V
CE(sat)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
VGES
VGEM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
1600
1600
± 20
± 30
IC25
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TC = 25°C
TC = 110°C
TC = 25°C, VGE = 20 V, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 20 Ω
Clamped inductive load
TC = 25°C
75
25
200
ICM = 100
@ 0.8 VCES
300
-55 ... +150
150
-55 ... +150
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
260
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
°C
Md
Weight
Mounting torque (TO-247)
TO-247
TO-268
1.13/10 Nm/lb-in
6g
4g
Symbol
BVGVEC(tEhS)
ICES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ
=
25°C
unless
min.
otherwise specified)
typ. max.
IC = 250 μA, VGE = 0 V
IC = 250 μA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
VCE = 0 V, VGE = ±30 V
IC = IC110, VGE = 15 V
IC = 100 A, VGE = 20 V
TJ = 125°C
1600
3.0
V
5.0 V
50 μA
1 mA
±100 nA
2.5 V
4.7 V
TO-247 (IXGH)
G
CE
TO-268 (IXGT)
C (TAB)
G
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
High peak current capability
Low saturation voltage
MOS Gate turn-on
-drive simplicity
Rugged NPT structure
International standard packages
- JEDEC TO-268 and
- JEDEC TO-247 AD
Molding epoxies meet UL 94 V-0
flammability classification
Applications
Capacitor discharge
Pulser circuits
Advantages
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2005 IXYS All rights reserved
DS99381(12/05)
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C
unless
min.
otherwise specified)
typ. max.
gfs
IC(ON)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
RthJC
RthCK
IC = 50 A; VCE = 10 V, Note 1
VGE = 15V, VCE = 10V, Note 1
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES
Resistive load
IC = 100 A, VGE = 15 V, Note 1
VCE = 1200 V, RG = 10 Ω
(TO-247)
14 21
200
2090
94
34
84
15
37
47
236
86
440
0.25
S
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
0.42 K/W
K/W
Notes: 1. Pulse test, t < 300 μs, duty cycle < 2 %
TO-268: Minimum Recommended Footprint
IXGH 25N160
IXGT 25N160
www.DataSheet4U.com
TO-247 AD Outline
∅P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a subjective
pre-production design evaluation. Ixys reserves the right to change limits, test conditions,
and dimensions without notice.
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585
6,710,405B2 6,759,692
6,710,463
6771478 B2
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
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IXGT25N160 igbt
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