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SEMIX302GAR12T4S 반도체 회로 부품 판매점

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Semikron International
SEMIX302GAR12T4S 데이터시트, 핀배열, 회로
SEMiX 302GB12T4s
SEMiX®2s
Trench IGBT Modules
SEMiX 302GB12T4s
wSwEwM.iDXat3a0S2heGeAt4LU1.c2oTm4s
SEMiX 302GAR12T4s
Target Data
Features
   
        
         
  
     !
Typical Applications
 "     #
 $%
    & # 
Remarks
       # 
'()* +,
 %#   !    #
 -').*
 /     
  !      0
23 4 .4)54
23 4 .4)54
234+(4(5 4
24+.4)5 
Absolute Maximum Ratings
Symbol Conditions
IGBT

6
-  () *
-  '7) *
62<
62<;+6 
3
 
  9.. ? 3 @ (. ?
 A '(.. 
Inverse Diode
6C -  '7) *
6C2<
Module
62< 
-
 
 
6C2<;+6C 
"4 '  ,
  ()*4       #
Values
Units
  () *
  :. *
-  '). *
'(..
89.
;))
=..
> (.
'.

"
"
"

B
  () *
  :. *
;))
(9)
=..
9..
D 8. ,,, E '7)
D 8. ,,, E '()
8...
"
"
"
"
*
*

Characteristics
  ()*4       #
Symbol Conditions
min. typ. max. Units
IGBT
3
3  4 6  '( "
) )4: 94) 
6
.

 



3  . 4   
3  ') 
6   ;.. "4 3  ') 
-  () *
-  () *
-  '). *
-  ()*
-  ').*
-  ()* ,
-  ').* ,
  ()4 3  . 
 ' <F
.4; "
.4: .4= 
.47 .4: 
;4; ;47 5
) )4; 5
'4: ( 
(4( (48 
':49 C
'4( C
' C
G3 3  D: ,,, E')
'7..

23 
# 


# 

-  () *
23  '4= 5
#I#  )... "IB
23  '4= 5
#I#  (:.. "IB
  9..
6  ;.."
-  '). *
(4) H
(9.
9.
;. J
8=.
=.
 ;; J
2-D
  63K
.4.=9 LI&
GB
GAL
GAR
1
26-07-2007 SCH
© by SEMIKRON


SEMIX302GAR12T4S 데이터시트, 핀배열, 회로
SEMiX 302GB12T4s
Characteristics
SEMiX®2s
Trench IGBT Modules
Symbol Conditions
Inverse Diode
C  
6C   ;.. "? 3  . 
C.
C
622<
G

2-D/
Module
6C   ;.. "
#I#  8;.. "IB
3  D') ?   9.. 
  ##
-  () * ,
-  '). * ,
-  () *
-  '). *
-  () *
-  '). *
-  '). *
min.
typ.
(4')
(4.)
'4;
.4=
(4:
;4:
(;.
).
'=
max. Units
(48) 
(48 
'4) 
'4' 
;4( 5
84; 5
"
B
J
.4'7 LI&
SEMiX 302GB12T4s
wSwEwM.iDXat3a0S2heGeAt4LU1.c2oTm4s
SEMiX 302GAR12T4s
Target Data
Features
M
2NEN
2D 
<
<

 ,4   D
  # 
    O <)
    <9
  () *
  '() *
':
.47
'
.4.8)

5
5
LI&
; ) P
(4) ) P
(). 
   
        
         
  
     !
Temperature sensor
2'..
'..* 2()) O5
K'..I'()
22'.. +RK'..I'()'ID'I'..S?
RLS
.48=;>)Q
;)).>(Q
O5
L
Typical Applications
 "     #
 $%
    & # 
Remarks
       # 
'()* +,
 %#   !    #
 -').*
 /     
  !      0
23 4 .4)54
23 4 .4)54
234+(4(5 4
24+.4)5 
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
GAL
GAR
2
26-07-2007 SCH
© by SEMIKRON




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