APTGF50DH60T1G 반도체 회로 부품 판매점
Asymmetrical - Bridge NPT IGBT Power Module
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 Microsemi Corporation |
Asymmetrical - Bridge
NPT IGBT Power Module
APTGF50DH60T1Gwww.DataSheet4U.com
VCES = 600V
IC = 50A* @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Pins 3/4 must be shorted together
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
600
65*
50*
230
±20
250
100A @ 500V
Unit
V
A
V
W
* Specification of IGBT device but output current must be limited to 40A to not exceed a delta of temperature greater
than 35°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–7
APTGF50DH60T1Gwww.DataSheet4U.com
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ
ICES Zero Gate Voltage Collector Current
VCE(sat)
VGE(th)
IGES
Collector Emitter Saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
VGE = 0V
VCE = 600V
Tj = 25°C
Tj = 125°C
VGE =15V
IC = 50A
Tj = 25°C
Tj = 125°C
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
1.7
4
2.0
2.2
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf
Td(on)
Tr
Fall Time
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Isc Short Circuit data
Test Conditions
Min Typ
VGE = 0V
VCE = 25V
f = 1MHz
2200
323
200
VGE = 15V
VBus = 300V
IC = 50A
166
20
100
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7Ω
40
9
120
12
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7Ω
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7Ω
Tj = 125°C
Tj = 125°C
VGE ≤15V ; VBus = 360V
tp ≤ 10µs ; Tj = 125°C
42
10
130
21
0.5
1
225
Diode ratings and characteristics (CR2 & CR3)
Symbol Characteristic
Test Conditions
Min Typ
VRRM Maximum Peak Repetitive Reverse Voltage
600
IRM Maximum Reverse Leakage Current
VR=600V
Tj = 25°C
Tj = 125°C
IF DC Forward Current
Tc = 80°C
30
VF Diode Forward Voltage
IF = 30A
IF = 60A
IF = 30A
Tj = 125°C
1.8
2.2
1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
CR1 & CR4 are IGBT protection diodes only
IF = 30A
VR = 400V
di/dt =200A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
25
160
35
480
Max
250
500
2.45
6
400
Max
Max
25
500
2.2
Unit
µA
V
V
nA
Unit
pF
nC
ns
ns
mJ
A
Unit
V
µA
A
V
ns
nC
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제조업체: Microsemi Corporation
( microsemi )
APTGF50DH60T1G igbt
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