APTGF30X60T3G 반도체 회로 부품 판매점
3 Phase bridge NPT IGBT Power Module
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 Microsemi Corporation |
www.DataSheet4U.com
APTGF30X60T3G
3 Phase bridge
NPT IGBT Power Module
VCES = 600V
IC = 30A @ Tc = 80°C
15 31
16
19 23 29 14
20 25 30
18 22 28 R1
11 8 4
10 7 3
13
12 2
It is recommended to connect a decoupling capacitor
between pins 31 & 2 to reduce switching overvoltages, if DC
Power is connected between pins 15, 16 & 12.
Pins 15 & 16 must be shorted together.
Application
• Motor control
Features
• Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• RoHS compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
600
42
30
100
±20
140
60A@500V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTGF30X60T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES Zero Gate Voltage Collector Current
VCE(sat)
VGE(th)
IGES
Collector Emitter saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
VGE = 0V
VCE = 600V
Tj = 25°C
Tj = 125°C
VGE =15V
IC = 30A
Tj = 25°C
Tj = 125°C
VGE = VCE, IC = 1mA
VGE = 20V, VCE = 0V
1.7
4
250
500
µA
2.0 2.45
2.2
V
6V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Qg Total gate Charge
Qge Gate – Emitter Charge
Qgc Gate – Collector Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
1350
193
120
pF
VGE = 15V
VBus = 300V
IC =30A
99
10 nC
60
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 30A
RG = 6.8Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 30A
RG = 6.8Ω
VGE = 15V
VBus = 400V
IC = 30A
RG = 6.8Ω
Tj = 125°C
Tj = 125°C
30
12
80
15
32
12
90
21
0.3
0.8
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=600V
Tj = 25°C
Tj = 125°C
600
V
25 µA
500
IF DC Forward Current
VF Diode Forward Voltage
IF = 30A
IF = 60A
IF = 30A
Tc = 80°C
Tj = 125°C
30
1.8 2.2
2.2
1.5
A
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 30A
VR = 400V
di/dt =200A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
25
160
35
480
ns
nC
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APTGF30X60T3G igbt
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