APT30GN60SDQ2G 반도체 회로 부품 판매점
Resonant Mode Combi IGBT
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 Microsemi Corporation |
TYPICAL PERFORMANCE CURVES
APT30GN60BDQ2 APTA3P0GTN3600GBND6_S0DSQD2Q(G2)
APT30GN60BDQ2(G) APT30GN60SDQ2(G)
www.DataSheet46U0.c0oVm
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive
design and minimizes losses.
(B)
TO-247
• 600V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• 6µs Short Circuit Capability
• 175°C Rated
G
C
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
D3PAK
(S)
C
GE
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT30GN60BD_SDQ2(G) UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±30
63
37
90
90A @ 600V
203
-55 to 175
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
RG(int)
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA)
Gate Threshold Voltage (VCE = VGE, I C = 430µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 30A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 30A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
600
5.0 5.8 6.5
1.1 1.5 1.9
1.7
50
TBD
300
N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Units
Volts
µA
nA
Ω
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
SSOA
SCSOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Input Capacitance
Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Gate Charge
VGE = 15V
VCE = 300V
IC = 30A
Switching Safe Operating Area
Short Circuit Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (With Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
TJ = 150°C, RG = 4.3Ω 7, VGE =
15V, L = 100µH,VCE = 600V
VCC = 360V, VGE = 15V,
TJ = 150°C, RG = 4.3Ω 7
Inductive Switching (25°C)
VCC = 400V
VGE = 15V
IC = 30A
RG = 4.3Ω 7
TJ = +25°C
Inductive Switching (125°C)
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (With Diode) 55
Turn-off Switching Energy 66
VCC = 400V
VGE = 15V
IC = 30A
RG = 4.3Ω 7
TJ = +125°C
APT30GN60BD_SDQ2(G)
MIN
TYP MAX UNIT
www.DataSheet4U.com
1750
70 pF
50
9.0 V
165
10 nC
90
90 A
6
12
14
155
55
525
565
700
12
14
180
75
555
950
895
µs
ns
µJ
ns
µJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJC
WT
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN TYP MAX UNIT
.74
°C/W
.67
5.9 gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and diode leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
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관련 데이터시트
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Resonant Mode Combi IGBT - Microsemi Corporation