APT11GP60SA 반도체 회로 부품 판매점
POWER MOS 7 IGBT
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 Advanced Power Technology |
TYPICAL PERFORMANCE CURVES
APT11GAPTP11G6P600K_KSA
APT11GP60SAwww.DataSheet4U.com
600V
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• SSOA rated
(K)
TO-220
GCE
(SA)
D2PAK
C
GE
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT11GP60K_SA
UNIT
VCES
VGE
VGEM
IC1
IC2
ICM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±20
±30
41
20
45
45A @ 600V
187
-55 to 150
300
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 11A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 11A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
MIN TYP MAX UNIT
600
3 4.5 6
Volts
2.2 2.7
2.1
250
2500
µA
±100 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
APT11GP60K_SA
Symbol Characteristic
Test Conditions
Cies Input Capacitance
Capacitance
Coes
Cres
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
VGEP
Qg
Qge
Qgc
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Gate Charge
VGE = 15V
VCE = 300V
IC = 11A
SSOA Switching Safe Operating Area
TJ = 150°C, RG = 5Ω, VGE =
15V, L = 100µH,VCE = 600V
td(on)
tr
td(off)
tf
Eon1
Eon2
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Inductive Switching (25°C)
VCC = 400V
VGE = 15V
IC = 11A
RG = 5Ω
TJ = +25°C
Eoff Turn-off Switching Energy 6
td(on)
tr
td(off)
tf
Eon1
Eon2
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Inductive Switching (125°C)
VCC = 400V
VGE = 15V
IC = 11A
RG = 5Ω
TJ = +125°C
Eoff Turn-off Switching Energy 6
THERMAL AND MECHANICAL CHARACTERISTICS
MIN
45
TYP MAX UNIT
www.DataSheet4U.com
1210
110 pF
6
7.5 V
40
8 nC
13
A
7
9 ns
29
50
46
85 µJ
90
7
9
65 ns
85
46
185 µJ
215
Symbol Characteristic
MIN TYP MAX UNIT
RΘJC
RΘJC
WT
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
0.67
N/A
5.90
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
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