IXGH24N60BU1 반도체 회로 부품 판매점
HiPerFAST IGBT
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 IXYS Corporation |
HiPerFASTTM IGBT
with Diode
IXGH 24N60BU1
VCES
I
C25
VCE(sat)
tfi
= 600 V
= 48 A
= 2.3 V
= 80 ns
Symbol
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VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 22 Ω
Clamped inductive load, L = 100 µH
PC TC = 25°C
TJ
TJM
Tstg
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque
Maximum Ratings
600
600
±20
±30
48
24
96
ICM = 48
@ 0.8 VCES
150
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
1.13/10 Nm/lb.in.
6g
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 750 µA, VGE = 0 V
IC = 250 µA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
600
2.5
V
5.5 V
500 µA
8 mA
±100 nA
2.3 V
TO-247 AD
G
CE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
• High frequency IGBT and antiparallel
FRED in one package
• High current handling capability
• 3rd generation HDMOSTM process
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies
(UPS)
• Switched-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices in one
package)
• High power density
• Suitable for surface mounting
• Switching speed for high frequency
applications
• Easy to mount with 1 screw
(insulated mounting screw hole)
© 2003 IXYS All rights reserved
DS95583C(01/03)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC = IC90; VCE = 10 V,
9 13
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
S
Cies
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz
1500
175
40
QG
QGE
QGC
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
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tri
Inductive load, TJ = 25°C
Eon
td(off)
tfi
Eoff
IC = IC90, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = Roff = 10 Ω
Remarks: Switching times may
increase for VCE (Clamp) >
higher TJ or increased RG
0.8
•
VCES,
24N60BU1
90
11
30
25
15
0.6
150
80
0.8
td(on)
25
tri
Eon
td(off)
tfi
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 10 Ω
15
0.8
250
100
Eoff 24N60BU1 1.4
pF
pF
pF
120 nC
15 nC
40 nC
ns
ns
mJ
200 ns
150 ns
mJ
ns
ns
mJ
ns
ns
mJ
RthJC
RthCK
0.83 K/W
0.25
K/W
IXGH 24N60BU1
TO-247 AD Outline
∅P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF IF = IC90, VGE = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.6 V
IRM
trr
RthJC
IF = IC90, VGE = 0 V, -diF/dt = 240 A/µs
VR = 360 V
TJ = 125°C
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C
10
150
35
15 A
ns
50 ns
1 K/W
Min. Recommended Footprint (Dimensions in inches and (mm))
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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제조업체: IXYS Corporation
( ixys )
IXGH24N60BU1 igbt
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