IXGH24N50B 반도체 회로 부품 판매점
(IXGH24N50B / IXGH24N60B) HiPerFAST IGBT
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 IXYS Corporation |
HiPerFASTTM IGBT
IXGH24N50B
IXGH24N60B
VCES
500 V
600 V
IC(25)
48 A
48 A
VCE(sat)
2.3 V
2.5 V
tfi
80 ns
80 ns
Preliminary data
www.DataSheet4U.com
Symbol
Test Conditions
VCES
VCGR
VGES
V
GEM
IC25
IC90
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 22 W
Clamped inductive load, L = 100 mH
PC TC = 25°C
T
J
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque (M3)
Maximum Ratings
24N50 24N60
500 600
500 600
±20
±30
48
24
96
ICM = 48
@ 0.8 VCES
150
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
1.13/10 Nm/lb.in.
6g
Symbol
BVCES
VGE(th)
I
CES
IGES
VCE(sat)
Test Conditions
IC = 250 mA, VGE = 0 V
IC = 250 mA, VCE = VGE
V = 0.8 • V
CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
24N50
24N60
500
600
2.5
T
J
=
25°C
TJ = 125°C
24N50
24N60
V
V
5V
200 mA
1 mA
±100 nA
2.3 V
2.5 V
TO-247 AD
G
CE
G = Gate,
E = Emitter,
C (TAB)
C = Collector,
TAB = Collector
Features
• International standard packages
JEDEC TO-247 AD
• High frequency IGBT
• High current handling capability
• 3rd generation HDMOSTM process
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
Advantages
• High power density
• Switching speed for high frequency
applications
• Easy to mount with 1 screw
(insulated mounting screw hole)
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
95584 B (7/00)
1-4
IXGH24N50B
IXGH24N60B
Symbol
gfs
Cies
C
oes
Cres
Qg
www.DataSheetQ4Uge.com
Qgc
t
d(on)
tri
E
on
td(off)
t
fi
Eoff
t
d(on)
tri
E
on
td(off)
tfi
Eoff
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
V = 25 V, V = 0 V, f = 1 MHz
CE GE
I = I , V = 15 V, V = 0.5 V
C C90 GE
CE CES
9 13
S
1500
135
40
90
11
30
pF
pF
pF
120 nC
15 nC
40 nC
Inductive
load,
T
J
=
25°C
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may
increase for V (Clamp) > 0.8 • V ,
CE CES
higher TJ or increased RG
Inductive load, TJ = 125°C
I
C
=
I,
C90
V
GE
=
15
V,
L
=
100
mH
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
25 ns
15 ns
0.6 mJ
150 200 ns
80 150 ns
24N50B 0.62
24N60B 0.80
mJ
mJ
25 ns
15 ns
0.8 mJ
250 ns
100 ns
24N50B 0.9
24N60B 1.4
mJ
mJ
0.83 K/W
0.25 K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
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( ixys )
IXGH24N50B igbt
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