IXGT16N170A 반도체 회로 부품 판매점
High Voltage IGBT
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 IXYS Corporation |
High Voltage
IGBT
Advance Technical Data
IXGH 16N170A
IXGT 16N170A
VCES
I
C25
VCE(sat)
tfi(typ)
= 1700 V
= 16 A
= 5.0 V
= 40 ns
Symbol
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VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
tSC
PC
TJ
TJM
Tstg
Md
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
1700
1700
±20
±30
V
V
V
V
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
16
8
40
VGE = 15 V, TVJ = 125°C, RG = 10Ω
Clamped inductive load
ICM = 40
@ 0.8 VCES
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22Ω
10
A
A
A
A
µs
TC = 25°C
190
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
Mounting torque (M3)
(TO-247)
1.13/10Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247
TO-268
300
6
4
°C
g
g
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 250 µA, VGE = 0 V
IC = 250 µA, VCE = VGE
1700
3.0
5.0
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
Note 1 TJ = 125°C
50
750
VCE = 0 V, VGE = ±20 V
±100
IC = IC90, VGE = 15 V
TJ = 25°C
TJ = 125°C
4.0 5.0
4.8
V
V
µA
µA
nA
V
V
TO-268 (IXGT)
G
E
TO-247 AD (IXGH)
C (TAB)
G
CE
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
C (TAB)
Features
z International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
z High current handling capability
z MOS Gate turn-on
- drive simplicity
z Rugged NPT structure
z Molding epoxies meet UL 94 V-0
flammability classification
Applications
z Capacitor discharge & pulser circuits
z AC motor speed control
z DC servo and robot drives
z DC choppers
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
Advantages
z High power density
z Suitable for surface mounting
z Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2003 IXYS All rights reserved
DS98993(01/03)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC = IC25; VCE = 10 V
Note 2
Cies
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
Qge
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IC = IC90, VGE = 15 V, VCE = 0.5 VCES
td(on) Inductive load, TJ = 25°C
tri IC = IC25, VGE = 15 V
td(off)
tfi
RG = 10 Ω, VCE = 0.8 VCES
Note 3
Eoff
6 10
S
1700
83
30
65
13
24
36
57
200
40
0.9
pF
pF
pF
nC
nC
nC
ns
ns
350 ns
150 ns
1.5 mJ
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Inductive load, TJ = 125°C
IC = IC25, VGE = 15 V
RG = 10 Ω, VCE = 0.8 VCES
Note 3
(TO-247)
38 ns
59 ns
1.5 mJ
200 ns
55 ns
1.1 mJ
0.65 K/W
0.25
K/W
IXGH 16N170A
IXGT 16N170A
TO-247 AD Outline
∅P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b 1.65 2.13
1
b 2.87 3.12
2
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Notes: 1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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IXGT16N170A igbt
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