IXGR60N60U1 반도체 회로 부품 판매점
LowV-CE(sat) IGBT
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 IXYS Corporation |
www.DataSheet4U.com
Low VCE(sat) IGBT
with Diode
IXGR 60N60U1
ISOPLUS247TM
(Electrically Isolated Back Surface)
VCES = 600 V
IC25 = 75 A
VCE(sat) = 1.7 V
Preliminary data
Symbol
Test Conditions
V
CES
VCGR
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
VGES
V
GEM
Continuous
Transient
IC25
IC100
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
SSOA VGE = 15 V, TVJ = 125°C, RG = 10 W
(RBSOA) Clamped inductive load; V = 0.8 V
CL CES
PC TC = 25°C
TJ
TJM
Tstg
TL 1.6 mm (0.062 in.) from case for 10 s
VISOL 50/60Hz, RMS, t = 1minute, leads-to tab
Weight
Maximum Ratings
600 V
600 V
±20
±30
75
60
200
ICM = 100
V
V
A
A
A
A
300
-55 ..+ 150
150
-55...+ 150
300
2500
5
W
°C
°C
°C
°C
V
g
Symbol
BV
CES
VGE(th)
I
CES
IGES
VCE(sat)
Test Conditions
I = 1 mA, V = 0 V
C GE
IC = 250 mA, VCE = VGE
V =V
CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC100, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
T
J
=
25°C
TJ = 150°C
600
2.5
V
5.5 V
250 mA
2 mA
±100 nA
1.7 V
ISOPLUS247TM
G
CE
Isolated back surface*
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
* Patent pending
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low collector to tab capacitance
(<25pF)
• Rugged polysilicon gate cell structure
• Fast intrinsic Rectifier
• Low V IGBT and standard diode
CE(sat)
for minimum on-state conduction
losses
• MOS Gate turn-on for drive simplicity
Applications
• Solid state relays
• Capacitor discharge circuits
• High power ignition circuits
Advantages
• Space savings (two devices in one
package)
• Reduces assembly time and cost
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98595C (7/00)
1-5
IXGR 60N60U1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC = IC100; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
30 40
S
C
ies
Coes
C
res
Qg
Q
ge
Qgc
t
d(on)
tri
t
d(off)
tfi
Eoff
t
d(on)
tri
t
d(off)
tfi
Eoff
R
thJC
RthCK
VCE = 25 V, VGE = 0 V, f = 1 MHz
I = I , V = 15 V, V = 0.5 V
C C100 GE
CE CES
Inductive load, TJ = 25°C
IC = IC100, VGE = 15 V, L = 100 mH,
V
CE
=
0.8
V,
CES
R
G
=
R
off
=
2.7
W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive
load,
T
J
=
125°C
IC = IC100, VGE = 15 V, L = 100 mH
V
CE
=
0.8
V,
CES
R
G
=
R
off
=
2.7
W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
4000
340
100
200
35
80
50
200
600
500
16
50
240
1000
1000
26
0.15
pF
pF
pF
nC
nC
nC
ns
ns
800 ns
700 ns
mJ
ns
ns
ns
ns
mJ
0.5 K/W
K/W
ISOPLUS 247 (IXGR) OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
S 13.21 13.72
T 15.75 16.26
U 1.65 3.03
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
.520 .540
.620 .640
.065 .080
Reverse Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
R
thJC
IF = IC100, VGE = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
2.2 V
1.0 K/W
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-5
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IXGR60N60U1 igbt
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