DIM600BSS12-E000 반도체 회로 부품 판매점
Single Switch IGBT Module
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 Dynex Semiconductor |
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DIM600BSS12-E000
DIM600BSS12-E000
Single Switch IGBT Module
Replaces issue September 2003, version PDS5651-2.0
FEATURES
I Trench Gate Field Stop Technology
I Low Conduction Losses
I Low Switching Losses
I 10µs Short Circuit Withstand
PDS5702-1.2 January 2004
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1200V
1.7V
600A
1200A
APPLICATIONS
I Motor Drives
I Wind Turbines
I UPS Systems
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM600BSS12-E000 is a single switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
2(E)
5(E1)
3(G1)
1(C)
4(C1)
Fig. 1 Single switch circuit diagram
ORDERING INFORMATION
Order As:
DIM600BSS12-E000
Note: When ordering, please use the complete part number.
Outline type code: B
(See package details for further information)
Fig. 2 Module Outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1/9
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DIM600BSS12-E000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
VCES
VGES
IC
I
C(PK)
Pmax
I2t
Visol
Q
PD
Collector-emitter voltage
Gate-emitter voltage
VGE = 0V
-
Continuous collector current
Tcase = 80˚C
Peak collector current
1ms, Tcase = 110˚C
Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C
Diode I2t value
V = 0, t = 10ms, T = 125˚C
Rp
vj
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Partial discharge - per module
IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS
Max. Units
1200 V
±20 V
600 A
1200 A
2.75 kW
45 kA2s
2.5 kV
10 pC
2/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600BSS12-E000 igbt
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[ DIM600BSS12-E000.PDF ]
[ DIM600BSS12-E000 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
