IXGH30N60B2 반도체 회로 부품 판매점
(IXGH30N60B2 / IXGT30N60B2) HiPerFAST IGBT
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 IXYS Corporation |
www.DataSheet4U.com
Advance Technical Data
HiPerFASTTM IGBT
Optimized for 10-25 KHz hard
switching and up to 150 KHz
resonant switching
IXGH 30N60B2
IXGT 30N60B2
VCES
IC25
VCE(sat)
tfi typ
= 600 V
= 70 A
< 1.8 V
= 82 ns
Symbol
Test Conditions
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
VGES
VGEM
Continuous
Transient
IC25 TC = 25°C (limited by leads)
IC110
TC = 110°C
ICM TC = 25°C, 1 ms
SSOA
(RBSOA)
PC
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ ≤ 600 V
TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md Mounting torque (M3)
Weight
TO-247 AD
TO-268 SMD
Maximum Ratings
600 V
600 V
±20 V
±30 V
70 A
30 A
150 A
ICM = 60
A
190
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
1.13/10 Nm/lb.in.
6g
4g
Symbol
Test Conditions
VGE(th)
ICES
IGES
VCE(sat)
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 24 A, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
2.5 5.0 V
TJ = 25°C
TJ = 150°C
TJ = 25°C
50 µA
1 mA
±100 nA
1.8 V
TO-268
(IXGT)
G
E
C (TAB)
TO-247 AD
(IXGH)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z Medium frequency IGBT
z Square RBSOA
z High current handling capability
z MOS Gate turn-on
- drive simplicity
Applications
z PFC circuits
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z AC motor speed control
z DC servo and robot drives
z DC choppers
© 2003 IXYS All rights reserved
DS99122(11/03)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
IC = 24 A; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 24 A, VGE = 15 V, VCE = 300 V
Inductive load, TJ = 25°C
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5 Ω
Inductive load, TJ = 125°C
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5 Ω
(TO-247)
18 26
S
1500
115
40
pF
pF
pF
66 nC
9 nC
22 nC
13
15
110
82
0.32
ns
ns
200 ns
150 ns
0.6 mJ
13
17
0.22
200
150
0.9
ns
ns
mJ
ns
ns
mJ
0.65 K/W
0.25
K/W
IXGH 30N60B2
IXGT 30N60B2
TO-247 AD Outline
∅P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
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IXGH30N60B2 igbt
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