IXGH28N30 반도체 회로 부품 판매점
HiPerFAST IGBT
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 IXYS Corporation |
HiPerFASTTM IGBT
Preliminary data
IXGH 28N30
IXGT 28N30
VCES
=
IC25 =
V =CE(sat)typ
t
fi(typ)
=
300 V
56 A
1.6 V
180 ns
Symbol
Test Conditions
Maximum Ratings
V
CES
VCGR
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
300
300
VGES
VGEM
Continuous
Transient
±20
±30
IC25 TC = 25°C
I
C90
T
C
= 90°C
ICM TC = 25°C, 1 ms
56
28
112
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 10 W
Clamped inductive load, L = 100 mH
ICM = 56
@ 0.8 VCES
P
C
T
C
= 25°C
150
TJ -55 ... +150
TJM 150
T -55 ... +150
stg
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
260
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
°C
Md
Weight
Mounting torque (M3)
1.13/10 Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
Symbol
BVCES
V
GE(th)
ICES
I
GES
V
CE(sat)
Test Conditions
IC = 250 mA, VGE = 0 V
I
C
=
250
mA,
V
CE
=
V
GE
VCE = 0.8 • VCES
VGE = 0 V
V
CE
=
0
V,
V
GE
=
±20
V
I = I , V = 15 V
C C90 GE
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
300 V
2.5 5 V
200 mA
1 mA
±100 nA
1.6 1.8 V
TO-268
(IXGT)
G
E
TO-247 AD
(TAB)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
• International standard packages
JEDEC TO-268 surface and
JEDEC TO-247 AD
• High current handling capability
• Newest generation HDMOSTM
process
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
Advantages
• High power density
• Suitable for surface mounting
• Switching speed for high frequency
applications
• Easy to mount with 1 screw,
(isolated mounting screw hole)
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97528A (9/98)
1-2
IXGH 28N30
IXGT 28N30
Symbol
gfs
Cies
C
oes
Cres
Qg
Q
ge
Qgc
t
d(on)
tri
t
d(off)
tfi
E
off
td(on)
t
ri
Eon
t
d(off)
tfi
Eoff
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
V = 25 V, V = 0 V, f = 1 MHz
CE GE
I = I , V = 15 V, V = 0.5 V
C C90 GE
CE CES
Inductive
load,
T
J
=
25°C
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 4.7 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 125°C
I
C
=
I,
C90
V
GE
=
15
V,
L
=
100
mH
VCE = 0.8 VCES, RG = Roff = 4.7 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
12 18
S
1500
130
40
pF
pF
pF
90 nC
15 nC
35 nC
15 ns
30 ns
130 ns
180 ns
0.8 mJ
15 ns
30 ns
0.3 mJ
250 500 ns
250 600 ns
1.5 3.0 mJ
0.83 K/W
0.25 K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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( ixys )
IXGH28N30 igbt
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