BUP311D 반도체 회로 부품 판매점
IGBT With Antiparallel Diode Preliminary data sheet
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 Infineon Technologies |
Infineon
BUP 311D
IGBT With Antiparallel Diode
Preliminary data sheet
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Former Development ID: BUP 3JKD
Type
BUP 311D
VCE IC
1200V A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 100 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
Diode forward current
TC = 100 °C
Pulsed diode current, tp = 1 ms
TC = 25 °C
Power dissipation
TC = 25 °C
Chip or operating temperature
Storage temperature
Package
TO-218 AB
Pin 1
G
Pin 2
C
Pin 3
E
Ordering Code
CO6N70R7E8Q-AU4E1S0T2
Symbol
VCE
VCGR
VGE
IC
ICpuls
IF
IFpuls
Ptot
Tj
Tstg
Values
1200
Unit
V
1200
± 20
20
12
A
40
tbd
tbd
125
-55 ... + 150
-55 ... + 150
W
°C
Semiconductor Group
1
May-06-1999
Infineon
BUP 311D
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
IEC climatic category, DIN IEC 68-1
Thermal Resistance
Thermal resistance, junction - case
Diode thermal resistance, chip case
Symbol
Tj
Tstg
-
Values
-55 ... + 150
-55 ... + 150
55 / 150 / 56
Unit
°C
-
RthJC
RthJCD
≤1
≤ 2.5
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Static Characteristics
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 0.3 mA, Tj = 25 °C
4.5 5.5 6.5
Collector-emitter saturation voltage
VCE(sat)
VGE = 15 V, IC = 8 A, Tj = 25 °C
- 2.5 3
VGE = 15 V, IC = 8 A, Tj = 125 °C
- 3.1 3.7
VGE = 15 V, IC = 16 A, Tj = 25 °C
- 3.4 -
VGE = 15 V, IC = 16 A, Tj = 125 °C
- 4.3 -
Zero gate voltage collector current
ICES
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
--
0.4
Gate-emitter leakage current
IGES
VGE = 25 V, VCE = 0 V
--
120
Unit
V
mA
nA
Semiconductor Group
2
May-06-1999
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제조업체: Infineon Technologies
( infineon )
BUP311D igbt
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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