DIM1200ESM33-A000 반도체 회로 부품 판매점
Single Switch IGBT Module Preliminary Information
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 Dynex |
DIM1200ESM33-A000
Replaces August 2001, version DS5492-1.1
FEATURES
s 10µs Short Circuit Withstand
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
DIM1200ESM33-A000
Single Switch IGBT Module
Preliminary Information
DS5492-2.0 October 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
3300V
3.2V
1200A
2400A
Aux C
External connection
C1 C2
C3
The Powerline range of high power modules includes half
bridge, chopper, dual and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.
The DIM1200ESM33-A000 is a single switch 3300V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This device is optimised for traction drives and other applications
requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
G
Aux E
E1 E2
External connection
E3
Fig. 1 Single switch circuit diagram
ORDERING INFORMATION
Order As:
DIM1200ESM33-A000
Note: When ordering, please use the whole part number.
Outline type code: E
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10
DIM1200ESM33-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
VCES
V
GES
IC
IC(PK)
Pmax
I2t
V
isol
QPD
Collector-emitter voltage
Gate-emitter voltage
VGE = 0V
-
Continuous collector current
Tcase = 80˚C
Peak collector current
1ms, Tcase = 115˚C
Max. transistor power dissipation T = 25˚C, T = 150˚C
case
j
Diode I2t value
VR = 0, tp = 10ms, Tvj = 125˚C
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Partial discharge - per module
IEC1287. V1 = 2450V, V2 = 1800V, 50Hz RMS
Max. Units
3300 V
±20 V
1200 A
2400 A
14.7 kW
720 kA2s
6000 V
10 pC
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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DIM1200ESM33-A000 igbt
데이터시트 다운로드 :
[ DIM1200ESM33-A000.PDF ]
[ DIM1200ESM33-A000 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
