SGS10N60 반도체 회로 부품 판매점
Short Circuit Rated IGBT
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 Fairchild Semiconductor |
SGS10N60RUF
Short Circuit Rated IGBT
April 2001
IGBT
General Description
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
• Short circuit rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.2 V @ IC = 10A
• High input impedance
Application
AC & DC Motor controls, general purpose inverters, robotics, servo controls
C
G
TO-220F
GCE
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
TSC
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
E
SGS10N60RUF
600
± 20
16
10
30
10
55
22
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
2.3
62.5
Units
V
V
A
A
A
µs
W
W
°C
°C
°C
Units
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
SGS10N60RUF Rev. A
Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc Short Circuit Withstand Time
Qg Total Gate Charge
Qge Gate-Emitter Charge
Qgc Gate-Collector Charge
Le Internal Emitter Inductance
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 10mA, VCE = VGE
IC = 10A, VGE = 15V
IC = 16A, VGE = 15V
VCE = 30V, VGE = 0V,
f = 1MHz
VCC = 300 V, IC = 10A,
RG = 20Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 10A,
RG = 20Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCC = 300 V, VGE = 15V
@ TC = 100°C
VCE = 300 V, IC = 10A,
VGE = 15V
Measured 5mm from PKG
Min. Typ. Max. Units
600 -- -- V
-- 0.6 -- V/°C
-- -- 250 µA
-- -- ± 100 nA
5.0 6.0 8.5
-- 2.2 2.8
-- 2.5 --
V
V
V
-- 660 --
-- 115 --
-- 25 --
pF
pF
pF
-- 15 -- ns
-- 30 -- ns
-- 36 50 nS
-- 158 200 ns
-- 141 --
µJ
-- 215 --
µJ
-- 356 500 µJ
-- 16 -- ns
-- 33 -- ns
-- 42 60 ns
-- 242 350 ns
-- 161 --
µJ
-- 452 --
µJ
-- 613 860 µJ
10 -- -- µs
-- 30 45 nC
-- 5 10 nC
-- 8 16 nC
-- 7.5 -- nH
©2001 Fairchild Semiconductor Corporation
SGS10N60RUF Rev. A
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SGS10N60 igbt
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