SGP6N60UFD 반도체 회로 부품 판매점
Ultra-Fast IGBT
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 Fairchild Semiconductor |
SGP6N60UFD
Ultra-Fast IGBT
IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 3A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 35ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
GCE
TO-220
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
SGP6N60UFD
600
± 20
6
3
25
4
25
30
12
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
4.0
7.0
62.5
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGP6N60UFD Rev. A1
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 3mA, VCE = VGE
IC = 3A, VGE = 15V
IC = 6A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
VCC = 300 V, IC = 3A,
RG = 80Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 3A,
RG = 80Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 300 V, IC = 3A,
VGE = 15V
Measured 5mm from PKG
600 -- -- V
-- 0.6 -- V/°C
-- -- 250 uA
-- -- ± 100 nA
3.5 4.5 6.5
-- 2.1 2.6
-- 2.6 --
V
V
V
-- 220 --
-- 22 --
-- 7 --
pF
pF
pF
-- 15 -- ns
-- 25 -- ns
--
60 130
ns
--
70 150
ns
-- 57 -- uJ
-- 25 -- uJ
--
82 120
uJ
-- 22 -- ns
-- 32 -- ns
--
80 200
ns
-- 122 300 ns
-- 65 -- uJ
-- 46 -- uJ
-- 111 170 uJ
-- 15 22 nC
-- 5 8 nC
-- 4 6 nC
-- 7.5 -- nH
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
Parameter
VFM Diode Forward Voltage
trr Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr Diode Reverse Recovery Charge
Test Conditions
IF = 4A
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
IF = 4A,
di/dt = 200A/us
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.4
1.3
35
53
3.5
4.5
60
120
Max.
1.7
--
52
--
5.0
--
135
--
Units
V
ns
A
nC
©2002 Fairchild Semiconductor Corporation
SGP6N60UFD Rev. A1
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SGP6N60UFD igbt
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