SGP15N60 반도체 회로 부품 판매점
Short Circuit Rated IGBT
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 Fairchild Semiconductor |
SGP15N60RUF
Short Circuit Rated IGBT
September 2000
IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUF
series provides low conduction and switching losses as well
as short circuit ruggedness. RUF series is designed for the
applications such as motor control, UPS and general
inverters where short-circuit ruggedness is required.
Features
• Short Circuit rated 10us @ TC = 100°C, VGE = 15V
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 15A
• High Input Impedance
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
C
G
GCE
TO-220
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
TSC
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
E
SGP15N60RUF
600
± 20
24
15
45
10
160
64
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
0.77
62.5
Units
V
V
A
A
A
us
W
W
°C
°C
°C
Units
°C/W
°C/W
©2000 Fairchild Semiconductor International
SGP15N60RUF Rev. A
Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc Short Circuit Withstand Time
Qg Total Gate Charge
Qge Gate-Emitter Charge
Qgc Gate-Collector Charge
Le Internal Emitter Inductance
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 15mA, VCE = VGE
IC = 15A, VGE = 15V
IC = 24A, VGE = 15V
VCE = 30V, VGE = 0V,
f = 1MHz
VCC = 300 V, IC = 15A,
RG = 13Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 15A,
RG = 13Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCC = 300 V, VGE = 15V
@ TC = 100°C
VCE = 300 V, IC = 15A,
VGE = 15V
Measured 5mm from PKG
Min. Typ. Max. Units
600 -- -- V
-- 0.6 -- V/°C
-- -- 250 uA
-- -- ± 100 nA
5.0 6.0 8.5
-- 2.2 2.8
-- 2.5 --
V
V
V
-- 948 --
-- 101 --
-- 33 --
pF
pF
pF
-- 17 -- ns
-- 33 -- ns
-- 44 65 ns
-- 118 200 ns
-- 320 --
uJ
-- 356 --
uJ
-- 676 950 uJ
-- 20 -- ns
-- 34 -- ns
-- 48 70 ns
-- 212 350 ns
-- 340 --
uJ
-- 695 --
uJ
-- 1035 1450 uJ
10 -- -- us
-- 42 60 nC
-- 7 10 nC
-- 17 24 nC
-- 7.5 -- nH
©2000 Fairchild Semiconductor International
SGP15N60RUF Rev. A
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SGP15N60 igbt
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상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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