SKP10N60A 반도체 회로 부품 판매점
Fast IGBT
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 Infineon Technologies AG |
SKP10N60A
SKW10N60A
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
75% lower Eoff compared to previous generation
combined with low conduction losses
C
Short circuit withstand time – 10 s
Designed for:
- Motor controls
- Inverter
G
E
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Very soft, fast recovery anti-parallel Emitter Controlled
Diode
PG-TO-220-3-1
PG-TO-247-3
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SKP10N60A
SKW10N60A
VCE IC VCE(sat) Tj Marking Package
600V 10A
2.3V
150C K10N60 PG-TO-220-3-1
600V 10A
2.3V
150C K10N60 PG-TO-247-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 600V, Tj 150C
Diode forward current
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2
VGE = 15V, VCC 600V, Tj 150C
Power dissipation
TC = 25C
Operating junction and storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj , Tstg
Ts
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Value
600
20
10.6
40
40
21
10
42
20
10
92
-55...+150
260
Unit
V
A
V
s
W
C
°C
Rev. 2.4 12.06.2013
SKP10N60A
SKW10N60A
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol Conditions
RthJC
RthJCD
RthJA
PG-TO-220-3-1
PG-TO-247-3-21
Max. Value
1.35
2.4
62
40
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage V( B R ) C E S VG E = 0 V , I C = 5 0 0 A
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
VGE = 15V, IC=10A
Tj=25C
Tj=150C
VGE=0V, IF=10A
Tj=25C
Tj=150C
IC=300A,VCE=VGE
VCE=600V,VGE=0V
Tj=25C
Tj=150C
VCE=0V,VGE=20V
VCE=20V, IC=10A
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VCE=25V,
VGE=0V,
f=1MHz
Gate charge
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCC=480V, IC=10A
VGE=15V
PG-TO-220-3-1
PG-TO-247-3-21
VGE=15V,tSC10s
VCC 600V,
Tj 150C
min.
600
1.7
-
1.2
-
3
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
-
2
2.3
1.4
1.25
4
-
-
-
6.7
550
62
42
52
7
13
100
Unit
max.
-V
2.4
2.8
1.8
1.65
5
40
1500
100
-
A
nA
S
660 pF
75
51
68 nC
- nH
-
-A
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.4 12.06.2013
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제조업체: Infineon Technologies AG
( infineon )
SKP10N60A igbt
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