IXGH25N100AU1 반도체 회로 부품 판매점
High speed IGBT with Diode
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 IXYS Corporation |
Preliminary data
Low VCE(sat)
High speed IGBT
with Diode
VCES
IC25
VCE(sat)
IXGH25N100U1 1000 V 50 A 3.5 V
IXGH25N100AU1 1000 V 50 A 4.0 V
TO-247 AD (IXGH)
Symbol
Test Conditions
Maximum Ratings
VCES
V
CGR
VGES
VGEM
IC25
IC90
I
CM
SSOA
(RBSOA)
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
MΩ
Continuous
Transient
TC = 25°C
TC = 90°C
T
C
= 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 33 Ω
Clamped inductive load, L = 100 µH
PC
TJ
TJM
T
stg
Md
Weight
TC = 25°C
Mounting torque (M3)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
1000
1000
V
V
±20 V
±30 V
50 A
25 A
100 A
ICM = 50
@ 0.8 VCES
200
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300 °C
G
CE
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
l International standard package
JEDEC TO-247 AD
l IGBT and anti-parallel FRED in one
package
l 2nd generation HDMOSTM process
ll Low VCE(sat)
- for minimum on-state conduction
losses
l MOS Gate turn-on
- drive simplicity
l Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM
Symbol
BVCES
V
GE(th)
I
CES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 4.5 mA, VGE = 0 V
I
C
=
500
µA,
V
CE
=
V
GE
V = 0.8 • V
CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
T
J
=
25°C
TJ = 125°C
1000
2.5
25N100U1
25N100AU1
V
5.5 V
500 µA
8 mA
±100 nA
3.5 V
4.0 V
Applications
l AC motor speed control
l DC servo and robot drives
l DC choppers
l Uninterruptible power supplies (UPS)
l Switch-mode and resonant-mode
power supplies
Advantages
l Saves space (two devices in one
package)
l Easy to mount (isolated mounting
screw hole)
ll Reduces assembly time and cost
© 1996 IXYS All rights reserved
95587 (9/96)
IXGH25N100U1 IXGH25N100AU1
Symbol
g
fs
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
I = I ; V = 10 V,
C C90 CE
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
8 15
S
Cies
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz
2750
270
50
pF
pF
pF
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
t
d(on)
tri
Eon
td(off)
tfi
Eoff
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
I
C
=
I,
C90
V
GE
=
15
V,
L
=
300
µH,
VCE = 0.8 VCES, RG = Roff = 33 Ω
Remarks: Switching times
may increase
for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
25N100AU1
25N100AU1
Inductive
load,
T
J
=
125°C
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 33 Ω
Remarks: Switching times
may increase
for VCE (Clamp) > 0.8 • VCES,
higher T or increased R
JG
25N100U1
25N100AU1
25N100U1
25N100AU1
130 180 nC
25 60 nC
55 90 nC
100 ns
200 ns
500 ns
500 ns
5 mJ
100 ns
250 ns
3.5 mJ
720 1000 ns
950 3000 ns
800 ns
10 mJ
6 mJ
R
thJC
RthCK
0.62 K/W
0.25
K/W
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF IF = IC90, VGE = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2.5 V
IRM
trr
RthJC
IF = IC90, VGE = 0 V, -diF/dt = 240 A/µs
VR = 540 V
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V
TJ =125°C
TJ =25°C
16
120
35
18 A
ns
50 ns
1 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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( ixys )
IXGH25N100AU1 igbt
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