BUP305D 반도체 회로 부품 판매점
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
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 Siemens Semiconductor Group |
BUP 305 D
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Type
BUP 305 D
VCE IC
1200V 12A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 90 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 90 °C
Diode forward current
TC = 90 °C
Pulsed diode current, tp = 1 ms
TC = 25 °C
Power dissipation
TC = 25 °C
Chip or operating temperature
Storage temperature
Package
TO-218 AB
Symbol
VCE
VCGR
VGE
IC
ICpuls
IF
IFpuls
Ptot
Tj
Tstg
Pin 1 Pin 2 Pin 3
GCE
Ordering Code
Q67040-A4225-A2
Values
1200
Unit
V
1200
± 20
12
8
A
24
16
8
48
100
-55 ... + 150
-55 ... + 150
W
°C
Semiconductor Group
1
Dec-02-1996
BUP 305 D
Maximum Ratings
Parameter
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
-
-
Values
E
55 / 150 / 56
Unit
-
Thermal Resistance
Thermal resistance, chip case
Diode thermal resistance, chip case
RthJC
RthJCD
1
3.1
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Static Characteristics
Gate threshold voltage
VGE = VCE, IC = 0.3 mA, Tj = 25 °C
Collector-emitter saturation voltage
VGE = 15 V, IC = 5 A, Tj = 25 °C
VGE = 15 V, IC = 5 A, Tj = 125 °C
Zero gate voltage collector current
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
Gate-emitter leakage current
VGE = 20 V, VCE = 0 V
AC Characteristics
Transconductance
VCE = 20 V, IC = 5 A
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
VGE(th)
VCE(sat)
ICES
IGES
4.5
-
-
-
-
gfs
Ciss
Coss
Crss
1.7
-
-
-
5.5 6.5
2.8 3.3
3.8 4.3
- 0.35
- 100
2.5 -
650 800
50 80
20 30
K/W
Unit
V
mA
nA
S
pF
Semiconductor Group
2
Dec-02-1996
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제조업체: Siemens Semiconductor Group
( siemens )
BUP305D igbt
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[ BUP305D.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
관련 데이터시트
BUP305
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) - Siemens Semiconductor Group
BUP305D
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) - Siemens Semiconductor Group