FGB20N60SFD 반도체 회로 부품 판매점
IGBT
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 Fairchild Semiconductor |
March 2015
FGB20N60SFD
600 V, 20 A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20 A
• High Input Impedance
• Fast Switching : EOFF = 8 uJ/A
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC
General Description
Using novel field stop IGBT technology, Fairchild’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switch-
ing losses are essential.
COLLECTOR
(FLANGE)
GC E
TO-263AB/D2-PAK
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM(1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate-to-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
C
G
E
Ratings
600
±20
±30
40
20
60
20
10
60
208
83
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
©2011 Fairchild Semiconductor Corporation
FGB20N60SFD Rev. 1.6
1
www.fairchildsemi.com
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
Notes:
2: Mounted on 1” square PCB (FR4 or G-10 material)
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method
FGB20N60SFD FGB20N60SFD D2-PAK
Reel
Typ.
-
-
-
Reel Size
13” Dia
Max.
0.6
2.6
40
Tape Width
N/A
Unit
oC/W
oC/W
oC/W
Quantity
800
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
ΔBVCES
/ ΔTJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 μA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250 μA, VCE = VGE
IC = 20 A, VGE = 15 V
IC = 20 A, VGE = 15 V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
VCC = 400 V, IC = 20 A,
RG = 10 Ω, VGE = 15 V,
Inductive Load, TC = 25oC
VCC = 400 V, IC = 20 A,
RG = 10 Ω, VGE = 15 V,
Inductive Load, TC = 125oC
600 - - V
- 0.6 - V/oC
- - 250 μA
-
-
±400
nA
4.0 5.0 6.5
- 2.2 2.8
- 2.4 -
V
V
V
- 940 -
- 110 -
- 40 -
pF
pF
pF
- 13 - ns
- 16 - ns
- 90 - ns
-
24 48
ns
- 0.37 -
mJ
- 0.16 -
mJ
- 0.53 -
mJ
- 12 - ns
- 16 - ns
- 95 - ns
- 28 - ns
- 0.4 - mJ
- 0.28 -
mJ
- 0.69 -
mJ
©2011 Fairchild Semiconductor Corporation
FGB20N60SFD Rev. 1.6
2
www.fairchildsemi.com
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FGB20N60SFD igbt
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