MIXA10W1200TML 반도체 회로 부품 판매점
XPT IGBT
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 IXYS |
Six-Pack
XPT IGBT
Part name (Marking on product)
MIXA10W1200TML
10, 23
14
8
13
NTC
7
6
5
9, 24
18
17
4
3
22
21
2
1
MIXA10W1200TML
VCES = 1200 V
IC25 = 17 A
VCE(sat) = 1.8 V
11, 12
15, 16
19, 20
E72873
Pin configuration see outlines.
Features:
• High level of integration
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- square RBSOA @ 3x IC
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low VCE(sat)
• Temperature sense included
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
• AC motor drives
• Pumps, Fans
• Washing machines
• Air-conditioning system
• Inverter and power supplies
Package:
• E1 package
• Assembly height is 17.1 mm
• Insulated base plate
• Pins suitable for wave soldering and
PCB mounting
• UL registered E72873
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110223b
1-6
MIXA10W1200TML
Ouput Inverter T1 - T6
Symbol
VCES
VGES
VGEM
IC25
IC80
Ptot
VCE(sat)
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
VGE(th)
ICES
gate emitter threshold voltage
collector emitter leakage current
IGES
QG(on)
td(on)
tr
td(off)
tf
Eon
Eoff
RBSOA
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
ISC
(SCSOA)
RthJC
RthCH
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
Output Inverter D1 - D6
Symbol
VRRM
IF25
IF80
VF
Definitions
max. repetitve reverse voltage
forward current
forward voltage
Qrr
IRM
trr
Erec
RthJC
RthCH
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
continuous
transient
TVJ = 25°C
IC = 9 A; VGE = 15 V
IC = 0.3 mA; VGE = VCE
VCE = VCES; VGE = 0 V
VGE = ±20 V
VCE = 600 V; VGE = 15 V; IC = 10 A
TC = 25°C
TC = 80°C
TC = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
inductive load
VCE = 600 V; IC = 10 A
VGE = ±15 V; RG = 100 W
TVJ = 125°C
VGE = ±15 V; RG = 100 W; VCEK = 1200 V
TVJ = 125°C
VCE = 900 V; VGE = ±15 V;
TVJ = 125°C
RG = 100 W; tp = 10 µs; non-repetitive
(per IGBT)
min.
5.4
Ratings
typ. max.
1200
±20
±30
17
12
65
1.8 2.1
2.1
5.9 6.5
0.02 0.15
0.3
500
27
70
40
250
100
1.1
1.1
30
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
nC
ns
ns
ns
ns
mJ
mJ
A
40 A
2.0 K/W
0.7 K/W
Conditions
IF = 10 A; VGE = 0 V
VR = 600 V
diF /dt = -250 A/µs
IF = 10 A; VGE = 0 V
(per diode)
TVJ = 25°C
TC = 25°C
TC = 80°C
TVJ = 25°C
TVJ = 125°C
TVJ = 125°C
min.
Ratings
typ. max.
1200
19
13
1.95 2.2
1.95
1.3
10.5
350
0.35
2.4
0.8
Unit
V
A
A
V
V
µC
A
ns
mJ
K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110223b
2-6
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( ixys )
MIXA10W1200TML igbt
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