DIM1600FSS12-A000 반도체 회로 부품 판매점
Single Switch IGBT Module
|
|
 Dynex |
Replaces DS5541-3
DIM1600FSS12-A000
Single Switch IGBT Module
DS5541-4 July 2014 (LN31768)
FEATURES
10µs Short Circuit Withstand
Non Punch Through Silicon
Isolated Cu Base with Al2O3 Substrates
Lead Free construction
KEY PARAMETERS
VCES
VCE(sat) * (typ)
IC (max)
IC(PK) (max)
1200V
2.2V
1600A
3200A
* Measured at the power busbars, not the auxiliary terminals
APPLICATIONS
High Power Inverters
Motor Controllers
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM1600FSS12-A000 is a single switch 1200V,
n-channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus 10μs
short circuit withstand. This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
7(C)
9(G)
1(C)
2(C)
8(E)
3(E)
4(E)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM1600FSS12-A000
Note: When ordering, please use the complete part
number
Outline type code: F
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
1/8
DIM1600FSS12-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
VCES
VGES
IC
IC(PK)
Pmax
I2t
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I2t value
Visol Isolation voltage – per module
VGE = 0V
Test Conditions
Tcase = 85°C
1ms, Tcase = 110°C
Tcase = 25°C, Tj = 150°C
VR = 0, tp = 10ms, Tj = 125ºC
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Max. Units
1200 V
±20 V
1600 A
3200 A
13890
400
W
kA2s
2500 V
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Al2O3
Cu
Creepage distance:
20mm
Clearance:
10mm
CTI (Comparative Tracking Index):
>600
Symbol
Parameter
Rth(j-c) Thermal resistance – transistor
Rth(j-c)
Rth(c-h)
Thermal resistance – diode
Thermal resistance –
case to heatsink (per module)
Tj Junction temperature
Tstg Storage temperature range
Screw torque
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting – M6
Electrical connections – M4
Electrical connections – M8
Min Typ. Max Units
- - 9 °C/kW
- - 20 °C/kW
- - 8 °C/kW
- - 150 °C
- - 125 °C
-40 - 125 °C
- - 5 Nm
- - 2 Nm
- - 10 Nm
2/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
|
PDF 파일 내의 페이지 : 총 8 페이지
제조업체: Dynex
( dynex )
DIM1600FSS12-A000 igbt
데이터시트 다운로드 :
[ DIM1600FSS12-A000.PDF ]
[ DIM1600FSS12-A000 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
