RGTH60TS65 반도체 회로 부품 판매점
Field Stop Trench IGBT
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 ROHM Semiconductor |
RGTH60TS65
650V 30A Field Stop Trench IGBT
Data Sheet
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
30A
1.6V
194W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) High Speed Switching
3) Low Switching Loss & Soft Switching
4) Pb - free Lead Plating ; RoHS Compliant
lOutline
TO-247N
lInner Circuit
(2)
(1)(2)(3)
(1)
(1) Gate
(2) Collector
(3) Emitter
(3)
lApplications
PFC
lPackaging Specifications
Packaging
Tube
UPS
Reel Size (mm)
-
Power Conditioner
IH
Tape Width (mm)
Type
Basic Ordering Unit (pcs)
-
450
Taping Code
C11
Marking
RGTH60TS65
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
Gate - Emitter Voltage
Collector Current
Pulsed Collector Current
TC = 25°C
TC = 100°C
Power Dissipation
Operating Junction Temperature
TC = 25°C
TC = 100°C
Storage Temperature
*1 Pulse width limited by Tjmax.
VCES
VGES
IC
IC
ICP*1
PD
PD
Tj
Tstg
650
30
58
30
120
194
97
-40 to +175
-55 to +175
V
V
A
A
A
W
W
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/9
2014.05 - Rev.B
RGTH60TS65
lThermal Resistance
Parameter
Thermal Resistance IGBT Junction - Case
Data Sheet
Symbol
Rθ(j-c)
Values
Min. Typ. Max.
Unit
- - 0.77 °C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Min. Typ.
Max.
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
650
-
-
Unit
V
Collector Cut - off Current
ICES VCE = 650V, VGE = 0V
-
- 10 μA
Gate - Emitter Leakage Current
IGES VGE = 30V, VCE = 0V
-
- 200 nA
Gate - Emitter Threshold
Voltage
Collector - Emitter Saturation
Voltage
VGE(th) VCE = 5V, IC = 21.0mA 4.5 5.5 6.5
IC = 30A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
- 1.6 2.1
- 2.1 -
V
V
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/9
2014.05 - Rev.B
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RGTH60TS65 igbt
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