GDU90-20422 반도체 회로 부품 판매점
Gate Drive Unit
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 Dynex Semiconductor |
GDU 90 20422
GDU 90-20422
Gate Drive Unit
Replaces March 1998 version, DS4566-2.1
DS4566-3.0 January 2000
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
APPLICATIONS
s Used with Gate Turn-Off Thyristors in high current switching
applications
KEY PARAMETERS
IFGM
IG(ON)
dIGQ/dt
30A
7A
40A/µs
CONDITIONS - (UNLESS STATED OTHERWISE)
V1 = +5V
Test circuit GTO
V2 = +15V
DG646BH
V3 = -15V
GDU connection to GTO
500mm CO - AX cable type RC5327230
Test circuit emitter and gate drive emitter
Honeywell sweetspot HFE 4020 - 013
Test circuit emitter current
Test circuit receiver and gate drive receiver
30mA
Honeywell sweetspot HFD 3029 - 002
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
I +5V PSU current
V1
IV2 +15V PSU current
I
V3
V1(Min)
V
2(Min)
V
3(Min)
IFGM
IG(ON)
dI /dt
FG
dI /dt
GQ
-15V PSU current
+5V PSU minimum
+15V PSU minimum
-15V PSU minimum
Peak forward gate current
On-state gate current
Rate of rise of positive gate current
Rate of rise of negative gate current
Conditions
700Hz, 50% duty cycle
700Hz
700Hz, IT = 2000A
GTO T = 125˚C
j
-
-
-
-
-
Measured 10 - 75% IFGM
I = 2000A, 90% I - 50% I
T
G(ON)
GQM
Min. Typ. Max. Units
- - 3.80 A
- - 0.73 A
- - 9.20 A
3.8 - - V
14.0 - - V
14.0 - - V
30 - - A
-7-A
- 30 - A/µs
- 40 - A/µs
1/4
GDU 90 20422
TIMING CHARACTERISTICS
Symbol
t *†
1
t
2
t3*†
t4
t*
5
t6
t7
t8*
t9
t10
t
11
t
12
Parameter
No response pulse width of
input signal
Delay time emitter
current to receiver o/p
Turn-on delay emitter
current to 10% IFGM
I pulse width
FGM
Minimum on time
10% IFGM to 90% IG(ON)
Receiver storage time
Turn-off delay.
Emitter current to 90% IG(ON)
Minimum off time
90% IG(ON) to 10% IFGM
Delay time
Gate volts to o/p emitter current
Turn-off delay
Gate volts to test receiver o/p
Storage time
Gate volts to o/p emitter current
Turn-on delay
Gate volts to test receiver o/p
Conditions
Adjustable by R81 + R82
-
-
-
Adjustable by R37
-
-
Adjustable by R38
-
-
Measured at low IGQM
Measured at low IGQM
Min. Typ. Max. Units
2 - 3 µs
0.4 - 0.8 µs
5.2 - 6.2 µs
- 25 - µs
80 - 110 µs
0.5 - 0.9 µs
1.5 - 2.3 µs
80 - 110 µs
- 0.1 - µs
- 0.7 - µs
- 0.11 -
µs
- 0.81 -
µs
* t1,t3,t5,t8 are factory settings. † Adjustment of t1 alters t3. 1. Varies with IGQM due to gate lead impedance.
Test circuit
emitter current
Control card
receiver output
t1
t2
10µs
t6
Gate current
dIFG/dt
t3
Gate voltage
0V
Control card emitter current
10%
t4
t5
Min. ON time
dIGQ/dt
-8V
t9
t7
90% IG(ON)
QGQT
t8
Min. OFF
-8V
t11
Test circuit receiver output
t10 t12
2/4
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GDU90-20422 gate
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