TC74AC10F 반도체 회로 부품 판매점
Triple 3-Input NAND Gate
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 Toshiba Semiconductor |
TC74AC10P/F/FN
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74AC10P,TC74AC10F,TC74AC10FN
Triple 3-Input NAND Gate
The TC74AC10 is an advanced high speed CMOS 3-INPUT
NAND GATE fabricated with silicon gate and double-layer metal
wiring C2MOS technology.
It achieves the high speed operation similar to equivalent
Bipolar Schottky TTL while maintaining the CMOS low power
dissipation.
The internal circuit is composed of 3 stages including buffer
output, which provide high noise immunity and stable output.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
Features
• High speed: tpd = 5.0 ns (typ.) at VCC = 5 V
• Low power dissipation: ICC = 4 μA (max) at Ta = 25°C
• High noise immunity: VNIH = VNIL = 28% VCC (min)
• Symmetrical output impedance: |IOH| = IOL = 24 mA (min)
Capability of driving 50 Ω
transmission lines.
• Balanced propagation delays: tpLH ∼− tpHL
• Wide operating voltage range: VCC (opr) = 2 to 5.5 V
• Pin and function compatible with 74F10
Pin Assignment
Note: xxxFN (JEDEC SOP) is not available in
Japan.
TC74AC10P
TC74AC10F
TC74AC10FN
Weight
DIP14-P-300-2.54
SOP14-P-300-1.27A
SOL14-P-150-1.27
: 0.96 g (typ.)
: 0.18 g (typ.)
: 0.12 g (typ.)
Downloaded from Elcodis.com electronic components distributor
1
2007-10-01
IEC Logic Symbol
TC74AC10P/F/FN
Truth Table
ABC
LXX
XLX
XXL
HHH
X: Don’t care
Y
H
H
H
L
Absolute Maximum Ratings (Note 1)
Characteristics
Symbol
Rating
Unit
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC VCC/ground current
Power dissipation
Storage temperature
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
PD
Tstg
−0.5 to 7.0
−0.5 to VCC + 0.5
−0.5 to VCC + 0.5
±20
±50
±50
±100
500 (DIP) (Note 2)/180 (SOP)
−65 to 150
V
V
V
mA
mA
mA
mA
mW
°C
Note 1:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C should be
applied up to 300 mW.
Downloaded from Elcodis.com electronic components distributor
2
2007-10-01
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제조업체: Toshiba Semiconductor
( toshiba )
TC74AC10F gate
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[ TC74AC10F.PDF ]
[ TC74AC10F 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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전력반도체 문의 : 010-3582-2743
관련 데이터시트
TC74AC10F
Triple 3-Input NAND Gate - Toshiba Semiconductor
TC74AC10FN
Triple 3-Input NAND Gate - Toshiba Semiconductor
TC74AC10P
Triple 3-Input NAND Gate - Toshiba Semiconductor