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ACS11MS 반도체 회로 부품 판매점

Radiation Hardened Triple 3-Input AND Gate



Intersil Corporation 로고
Intersil Corporation
ACS11MS 데이터시트, 핀배열, 회로
Data Sheet
ACS11MS
November 1998
File Number 4543
Radiation Hardened Triple 3-Input AND
Gate
The Radiation Hardened ACS11MS is a Triple 3-Input AND
Gate. When all three inputs to one of the gates are at a
HIGH level, the corresponding Y output will be HIGH. A LOW
level on any input will cause the output for that gate to be
LOW. All inputs are buffered and the outputs are designed
for balanced propagation delay and transition times.
The ACS11MS is fabricated on a CMOS Silicon on Sapphire
(SOS) process, which provides an immunity to Single Event
Latch-up and the capability of highly reliable performance in
any radiation environment. These devices offer significant
power reduction and faster performance when compared to
ALSTTL types.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed below must be used when ordering.
Detailed Electrical Specifications for the ACS11MS are
contained in SMD 5962-98622. A “hot-link” is provided
on our homepage with instructions for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Ordering Information
ORDERING NUMBER
5962F9862201VCC
ACS11D/SAMPLE-03
5962F9862201VXC
ACS11K/SAMPLE-03
5962F9862201V9A
INTERNAL MKT. NUMBER
ACS11DMSR-03
ACS11D/SAMPLE-03
ACS11KMSR-03
ACS11K/SAMPLE-03
ACS11HMSR-03
Pinouts
ACS11MS
(SBDIP)
TOP VIEW
A1 1
B1 2
A2 3
B2 4
C2 5
Y2 6
GND 7
14 VCC
13 C1
12 Y1
11 C3
10 B3
9 A3
8 Y3
Features
• QML Qualified Per MIL-PRF-38535 Requirements
• 1.25 Micron Radiation Hardened SOS CMOS
• Radiation Environment
- Latch-Up Free Under any Conditions
- Total Dose. . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD (Si)
- SEU Immunity . . . . . . . . . . . . . <1 x 10-10 Errors/Bit/Day
- SEU LET Threshold . . . . . . . . . . . . >100MeV/(mg/cm2)
• Input Logic Levels . . . . VIL = (0.3)(VCC), VIH = (0.7)(VCC)
• Output Current . . . . . . . . . . . . . . . . . . . . . . . . ±8mA (Min)
• Quiescent Supply Current . . . . . . . . . . . . . . 100µA (Max)
• Propagation Delay . . . . . . . . . . . . . . . . . . . . . . 12ns (Max)
Applications
• High Speed Control Circuits
• Sensor Monitoring
• Low Power Designs
TEMP. RANGE (oC)
-55 to 125
25
-55 to 125
25
25
PACKAGE
14 Ld SBDIP
14 Ld SBDIP
14 Ld Flatpack
14 Ld Flatpack
Die
DESIGNATOR
CDIP2-T14
CDIP2-T14
CDFP4-F14
CDFP4-F14
N/A
A1
B1
A2
B2
C2
Y2
GND
ACS11MS
(FLATPACK)
TOP VIEW
1 14
2 13
3 12
4 11
5 10
69
78
VCC
C1
Y1
C3
B3
A3
Y3
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999


ACS11MS 데이터시트, 핀배열, 회로
Die Characteristics
DIE DIMENSIONS:
Size: 2390µm x 2390µm (94 mils x 94 mils)
Thickness: 525µm ±25µm (20.6 mils 1 mil)
Bond Pad: 110µm x 110µm (4.3 x 4.3 mils)
METALLIZATION: AI
Metal 1 Thickness: 0.7µm ±0.1µm
Metal 2 Thickness: 1.0µm ±0.1µm
SUBSTRATE POTENTIAL
Unbiased Insulator
Metallization Mask Layout
B1
(2)
ACS11MS
PASSIVATION:
Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30µm ±0.15µm
SPECIAL INSTRUCTIONS:
Bond VCC First
ADDITIONAL INFORMATION:
Worst Case Current Density: <2.0 x 105 A/cm2
Transistor Count: 97
ACS11MS
A1 VCC
(1) (14)
C1
(13)
A2 (3)
B2 (4)
NC
C2 (5)
(12) Y1
(11) C3
NC
(10) B3
(6) (7)
Y2 GND
(8)
Y3
(9)
A3
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
2




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Radiation Hardened Triple 3-Input AND Gate - Intersil Corporation